GP2400ESM12

GP2400ESM12 DYNEX | Alldatasheet

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Technical content

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. This device is optimised for traction drives and other applications requiring high thermal cycling capability.

FEATURES

n n - Channel Enhancement Mode n Non Punch Through Silicon n High Gate Input Impedance n Optimised For High Power High Frequency Operation n Isolated MMC Base with AlN n 1200V Rating n 2400A Per Module

APPLICATIONS

VCE(sat) (typ) 2.7V IC (max) 2400A IC(PK) (max) 4800A Fig. 1 Electrical connections - (not to scale) Fig.2 Single switch circuit diagram Outline type code: E (See package details for further information)

ORDERING INFORMATION

Order As: GP2400ESM12 Note: When ordering, please use the whole part number. C2C1 Aux C G Aux E E1 E2 E3 External connection External connection GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Test Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor Thermal resistance - diode Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25˚C unless stated otherwise. Symbol VCES VGES IC IC(PK) Pmax Visol Test Conditions VGE = 0V DC, Tcase = 75˚C, Tj = 125˚C 1ms, Tcase = 75˚C, Tj = 125˚C Tcase = 25˚C (Transistor), Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A kW V Max. 1200 ±20 2400 4800 20.8 2500 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) Tj Tstg Units ˚C/kW ˚C/kW ˚C/kW Nm Nm Nm Max. 13.3 150 125 125 Min. –40

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES , Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 2400A VGE = 15V, IC = 2400A, , Tcase = 125˚C DC, Tcase = 50˚C, Tj = 125˚C tp = 1ms, Tj = 125˚C IF = 2400A IF = 2400A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF C ies LM Units mA mA µA V V V A A V V nF nH Max. 100 7.5 3.5 4.0 2400 4800 2.4 2.5 Typ. 2.7 3.2 2.2 2.3 270 Min.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Units ns ns mJ ns ns mJ µC Max. Typ. 2300 400 820 2600 1100 490 200 Min. Test Conditions IC = 2400A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 3.3Ω L ~ 80nH IF = 2400A, VR = 50% VCES , dIF/dt = 2000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25˚C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Q rr Units ns ns mJ ns ns mJ µC Max. Typ. 2570 400 980 2650 1000 620 400 Min. Test Conditions IC = 2400A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 3.3Ω L ~ 80nH IF = 2400A, VR = 50% VCES , dIF/dt = 2000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Symbol t d(off) tf EOFF td(on) tr EON Q rr Tcase = 125˚C unless stated otherwise.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. SWITCHING DEFINITIONS t1 t2 t3 t4 10% 90% 10% +15V Vge IC Vce -15V t5 t6 t7 IC Vce Vge 90% -15V +15V 90% 10% Fig.3 Definition of turn-on switching times Fig.4 Definition of turn-off switching times Eon = ∫ Vce.Icdt td(on) = t2 - t1 tr = t3 - t2 t4 + 5µs Eoff = ∫ Vce.Icdt td(off) = t6 - t5 tf = t7 - t6 t7 + 5µs

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. TYPICAL CHARACTERISTICS Fig.5 Typical output characteristics Fig.6 Typical output characteristics Fig.7 Typical turn-on energy vs collector current Fig.8 Typical turn-on energy vs collector current 600 1200 1800 3600 4200 4800 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 3000 2400 600 1200 1800 3600 4200 4800 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 3000 2400 100 200 300 400 500 600 700 800 900 1000 0 800 400 1200 1600 2000 2400 Collector current, I C - (A) Turn-on energy, Eon - (mJ) Conditions: Tcase = 25˚C Vce = 600V Vge = 15V R g = 4.3Ω R g = 3.3Ω R g = 7Ω 200 400 600 800 1000 1200 0 400 800 1200 1600 2000 2400 Turn-on energy, Eon (mJ) Collector current, IC - (A) Conditions: Tcase = 125˚C Vce = 600V Vge = 15V A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω A B C

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Fig.9 Typical turn-off energy vs collector current Fig.10 Typical turn-off energy vs collector current Fig.11 Typical diode reverse recovery charge vs collector currentFig.12 Typical switching characteristics 200 400 600 800 1000 1200 1400 1600 0 400 800 1200 1600 2000 2400 Collector current, I C - (A) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 25˚C Vce = 600V Vge = 15V A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω A B C 200 400 600 800 1000 1200 1400 1600 1800 0 400 800 1200 1600 2000 2400 Collector current, I C - (A) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 125'C Vce = 600V Vge = 15V A: Rg = 7Ω B: Rg = 4.3Ω C: Rg = 3.3Ω A B C 100 120 140 160 0 400 800 1200 1600 2000 2400 Collector current, I C - (A) Diode turn-off energy, Eoff - (mJ) Conditions: VCE = 600V VGE = 15V R g = 3.3Ω Tcase = 125˚C Tcase = 25˚C 500 1000 1500 2000 2500 3000 0 400 800 1200 1600 2000 2400 Collector current, I C - (A) Switching times - (ns) td(off) tf td(on) tr Conditions: Tcase = 125˚C Vce = 600V Vge = 15V R g = 3.3Ω

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Fig.13 Diode typical forward characteristics Fig.14 Reverse bias safe operating area Fig.15 Forward bias safe operating area Fig.16 Transient thermal impedance 0.1 100 0.001 0.01 0.1 1 10 Pulse width, tp - (s) Transient thermal impedance, Zth(j-c) - (˚C/kW) Transistor Diode 400 800 1200 1600 2000 2400 0 0.5 1 1.5 2 2.5 3 Forward voltage, V F - (V) Forward current, IF - (A) Tj = 125˚C Tj = 25˚C 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 1400 Collector emitter voltage, V ce - (V) Collector current, IC - (A) Conditions: Tcase = 125'C Vge = 15 R g = 3.3 ohms 100 1000 10000 1 10 100 1000 10000 Collector emitter voltage, Vce - (V) Collector current, IC - (A) IC max (DC) tp = 1ms tp = 100µs tp = 50µs

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. Fig.18 3-Phase inverter operating frequency Fig.19 DC current rating vs case temperature 1000 2000 3000 4000 5000 6000 11 0 2 0 f MAX - (kHz) Inverter phase current - (A) PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 Conditions: T R g = 3.3Ω , VCC = 600V 0 500 1000 1500 2000 2500 3000 3500 4000 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) DC collector current, IC - (A)

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1650g Module outline type code: E

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than a basic semiconductor switch, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50. Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5360-1 Issue No. 1.1 May 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.