GP200MHS12

GP200MHS12 DYNEX | Alldatasheet

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Technical content

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/10 www.dynexsemi.com

FEATURES

I Non Punch Through Silicon I Isolated Copper Baseplate I Low Inductance Internal Construction

APPLICATIONS

The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As: GP200MHS12 Note: When ordering, please use the whole part number. KEY PARAMETERS VCES 1200V VCE(sat) (typ) 2.7V IC (max) 200A IC(PK) (max) 400A GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 Fig. 1 Half bridge circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: M (See package details for further information) 3(C1)2(E2)1(E1C 2) 11(C2) 9(C1) 6(G2) 7(E2) 5(E1) 4(G1) 1 2 311

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M6 Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Test Conditions VGE = 0V DC, Tcase = 72˚C 1ms, Tcase = 72˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A W V Max. 1200 ±20 200 400 1490 2500 Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) Tj Tstg Units ˚C/kW ˚C/kW ˚C/kW Nm Nm Max. 160 150 125 125 Min. –40

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/10 www.dynexsemi.com Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES , Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125˚C DC t p = 1ms IF = 200A IF = 200A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF C ies LM Units mA mA µA V V V A A V V nF nH Max. 6.5 3.5 4.0 200 400 2.4 2.5 Typ. 2.7 3.2 2.2 2.3 Min. 4.5

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Units ns ns mJ ns ns mJ µC Max. 700 200 550 110 Typ. 500 150 400 Min. Test Conditions IC = 200A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 4.7Ω L ~ 100nH IF = 200A, VR = 50% VCES , dIF/dt = 2500A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Q rr Tcase = 125˚C unless stated otherwise Units ns ns mJ ns ns mJ µC Max. 800 250 650 150 Typ. 600 200 500 110 Min. Test Conditions IC = 200A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 4.7Ω L ~ 100nH IF = 200A, VR = 50% VCES , dIF/dt = 2000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Symbol t d(off) tf EOFF td(on) tr EON Q rr

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/10 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical turn-on energy vs collector current 100 150 300 350 400 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 250 200 100 150 300 350 400 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 250 200 0 200 50 Collector current, IC - (A) Turn-on energy, EON - (mJ) Tj = 125˚C VGE = ±15V VCE = 600V A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω A B C 100 150 Fig. 6 Typical turn-off energy vs collector current 0 200 50 100 Collector current, IC - (A) Turn-off energy, EOFF - (mJ) Tj = 125˚C VGE = ±15V VCE = 600V A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω A B C 150

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig. 9 Diode typical forward characteristics Fig. 10 Reverse bias safe operating area Fig. 7 Diode typical turn-off energy vs collector current Fig. 8 Typical switching characteristics 0 25 50 75 100 125 150 175 200 Collector current, IT - (A) Diode turn-off energy, Eoff(diode) - (mJ) Tcase = 25˚C Tcase = 125˚C VGE = ±15V VCE = 900V 01 5 0 50 100 Collector current, IC - (A) 400 900Switching times, - (ns) Tj = 125˚C VGE = ±15V VCE = 600V R g = 4.7Ω tf td(off) tr td(on) 600 500 100 300 200 700 800 200 100 150 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, V F - (V) Forward current, IF - (A) Tj = 125˚CTj = 25˚C 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) 50µs 100µs IC max. (single pulse) IC max. DC (continuous) tp = 1ms

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.7/10 www.dynexsemi.com Fig. 11 Forward bias safe operating area 100 150 200 250 300 350 400 450 500 0 200 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) RBSOA Collector current, IC - (A) Tcase = 125˚C Vge = ±15V R g = 4.7Ω * *Recommended minimum value Fig. 12 Transient thermal impedance 100 1000 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode Transistor Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature 100 150 200 250 300 350 400 450 500 11 0 5 0 fmax - (kHz) Inverter phase current, IC(PK) - (A) PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 Conditions: T R g = 4.7Ω , VCC = 600V 120 160 200 240 280 320 02 0 4 06 010 30 50 80 70 90 100 110 120 130 Case temperature, Tcase - (˚C) Collector current, IC - (A)

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 106 ± 0.8 108 ± 0.8 3x M6 93 ± 0.3 48 ± 0.3 62 ± 0.8 4x Fast on tabs 28 ± 0.5 28 ± 0.5 38max 2 310 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.9/10 www.dynexsemi.com ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with Concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5296-1 Issue No.1.5 November 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.