GC300N65F GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 8 Pulsed Drain Current (note1) IDM 52 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 33 W Single pulse avalanche energy （note2） EAS 120 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 64 ºC/W Maximum Junction-to-Case RthJC 3.78 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GC300N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 650V l ID (at VGS = 10V) 13A l RDS(ON) (at VGS = 10V) < 300mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging GC300N65F TO-220F GC300N65 50pcs/Tube Schematic diagram TO-220F
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.8 3.6 3.8 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 7.5A -- 270 300 mΩ gFS VGS = 20V, ID = 7.5A -- 11 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 400V, f = 1.0MHz -- 680 -- pFOutput Capacitance Coss -- 30 -- Reverse Transfer Capacitance Crss -- 1.2 -- Total Gate Charge Qg VDD = 400V, ID = 7.5A, VGS = 10V -- 23 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 10 -- Turn-on Delay Time td(on) VDD = 400V, ID = 7.5A, RG = 25Ω -- 14 -- ns Turn-on Rise Time tr -- 24 -- Turn-off Delay Time td(off) -- 97 -- Turn-off Fall Time tf -- 22 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 13 A Body Diode Voltage VSD TJ = 25ºC, ISD =7.5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 7.5A, VGS = 0V di/dt=100A/us -- 2.94 -- μC Reverse Recovery Time Trr -- 245 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=30mH,Rg=25Ω 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.1)