GC280N65F GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current ID 15 A Pulsed Drain Current (note1) IDM 45 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 96.1 W Single pulse avalanche energy （note2） EAS 500 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 1.3 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GC280N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 650V l ID (at VGS = 10V) 15A l RDS(ON) (at VGS = 10V) < 280mΩ l 100% Avalanche Tested l Improved dv/dt Capability l Thin Wafer Technology applied l The ESD protection class is CLASS 1C. Application l LCD/LED/PDP TV l Telecom/Server Power supplies l AC-DC Power Supply l LED Lighting
Ordering Information
Device Package Marking Packaging GC280N65F TO-220F GC280N65 50pcs/Tube Schematic diagram TO-220F PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.5 4.0 4.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 7.5A -- 220 280 mΩ gFS VGS = 5V, ID = 7.5A -- 8.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 400V, f = 1.0MHz -- 1200 -- pFOutput Capacitance Coss -- 46 -- Reverse Transfer Capacitance Crss -- 0.4 -- Total Gate Charge Qg VDD = 400V, ID = 7.5A, VGS = 10V -- 27 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 10 -- Turn-on Delay Time td(on) VDD = 400V, ID = 7.5A, RG = 4.7Ω -- 18 -- ns Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 51 -- Turn-off Fall Time tf -- 14 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 15 A Body Diode Voltage VSD TJ = 25ºC, ISD = 7.5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 7.5A, VGS = 0V di/dt=100A/us -- 3.2 -- μC Reverse Recovery Time Trr -- 260 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=10mH,Rg=25Ω 3. Identical low side and high side switch with identical RG PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) PRELIMINARY