GC20N60F GOFORD | Alldatasheet
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Technical content
GOFORD &. GC20N60
Description
The GC20N60 uses advanced super junction technology and Rps(oNn) desi i @ 10v (Max) lesign to provide excellent Rosion), low gate charge and operation. This device is suitable for industry's AC-DC SMPS cow | 190ma requirement for PFC, AC/DC power conversion, and industrial power application. D General Features @ New technology for high voltage device G @ Lowon-resistance and low conduction losses @ Small Package Ss @ Ultra Low Gate Charge cause lower driving requirement 0 ng rea Schematic Diagram @ 100% Avalanche Tested @ RoHS Compliant od A Application . @ Power Factor Correction (PFC) ~ woes ‘s, ; 0-252 G . ‘s teal @ Switched Mode Power Supply (SMPS) ya) @ Uninterruptible Power Supply (UPS) Marking and Pin Assignment @ Ordering Information Absolute Maximum Ratings (Tc=25°C unless otherwise noted) | oma oar TO-220 TO-220F Drain-Source Voltage [ves Poo Gate-Source Voltage Drain Current-Continuous | Drain Current Pulsed (Note 1) Poe Pwo Single Pulse Avalanche Energy (Note 2) [ess P00 Avalanche Current (Note 1) | Repetitive Avalanche Energy (Note 1) = Maximum Power Dissipation PoP Tots Tw Operating Junction and Storage Temperature Range -55 To 150 Thermal Characteristic Parameter “Symbol TO-252 T0-220 TO-220F www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -2996 1466 V1.0
Electrical Characteristics (T;=25°Cunless otherwise noted) [| __Parameter | Symbol | Condition | min | Typ | Max | Unit | |offcharacteristics FP [Drain-Source Breakdown volage | _SVou | _Vemov.izanua | ooo | - | - | v_| [Zero Gate Votage Drain Curent (Tu=250) | loss | _Vose600V. Voseov | - | - | 1 | wA_| [Zero Gate Votage Drain Curent (Ti=150% ) | oss | _Vos000v, Veseov | - | - | 100 | uA_| [Gate-Boay Leakage Curent | oss | Vowrsa0v, vooeov | ~ | - | 00 | a _| [Gate TreshoidVatage «doa ~[ VeeeVenienasqpa [2 [- | « | v_| [Drain-Source On-State Resistance | _Rosow | Versi0v, 10a | - | - | 190 | mo [ForwarsTransconductance «| rs | oset0viortoa | - |- | - | 8 _| ee Nerv. TT ao0 | - | PF f=1.0MHz [Ts [= [Pr _| [- [= [iw [as [Tunonrantime | [= [so [108 | vs_| [Tota'Gatecharge dC [-[*«[- | 9 _| a ee [GateDreincrarge SiC [= [ao [= fre] [emir oy Davecuren toe |e [vase [-[ =] A. | Pused Diode Forward Curent | te | tema | | | | | A ere Od Isp=20A,Ves=0V [- [#0 [ - [as _| [Peek Reverse Recovey Curent | im | [fata] Notes: 41. Repetitive Rating: Pulse width limited by maximum junctiontemperature. 2. las = 10A, Von = 50V, Re = 250, Starting Ty = 25°C. 3. Pulse Test: Pulse Width s 300us, Duty Cycle < 1%. 4. Guaranteed by design, not subject to production www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -2996 1466 V1.0
Figure 1. Switching Test Circuit Figure 2. Switching Waveforms Figure 3. Output Characteristics Figure 4. Transfer Charateristics
8 T, = 25°C [ Cys
Figure 5. On Resistance vs. Drain Current Figure 6. Capacitance
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Figure 7. Gate Charge Figure 8. Body Diode Forward Voltage
2 S84 RE
Figure 9. Rdson vs Ty Figure 10. Vth vs Ty
10 SSN Ty 10) epee
Figure 11. Transient Thermal Figure 12. Transient Thermal Impedance
Figure 13. Safe Operating Area (TO- Figure 14. Safe Operating Area (TO-220F)
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