GC125N65FF GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Notes: Subject to final datasheet on GOFORD official website. Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 16 Pulsed Drain Current (note1) IDM 75 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 27 W Single pulse avalanche energy （note2） EAS 300 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 4.63 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GC125N65FF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 650V l ID (at VGS = 10V) 25A l RDS(ON) (at VGS = 10V) < 125mΩ l 100% Avalanche Tested l RoHS Compliant l Ultra-fast body diode Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging GC125N65FF TO-220F GC125N65F 50pcs/Tube Schematic diagram TO-220F PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Notes: Subject to final datasheet on GOFORD official website. Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 5 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.2 -- 4.6 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 12A -- 103 125 mΩ gFS VDS = 20V, ID =12 A -- 17 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 0.1MHz -- 1580 -- pFOutput Capacitance Coss -- 88 -- Reverse Transfer Capacitance Crss -- 1.2 -- Total Gate Charge Qg VDD = 480V, ID = 12A, VGS = 10V -- 52 -- nCGate-Source Charge Qgs -- 14 -- Gate-Drain Charge Qgd -- 30 -- Turn-on Delay Time td(on) VDD = 400V, ID = 12A, RG = 2Ω -- 25 -- ns Turn-on Rise Time tr -- 50 -- Turn-off Delay Time td(off) -- 65 -- Turn-off Fall Time tf -- 28 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 25 A Body Diode Voltage VSD TJ = 25ºC, ISD = 12A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 12A, VGS = 0V di/dt=100A/us -- 0.4 -- μC Reverse Recovery Time Trr -- 97 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=30mH,Rg=25Ω 3. Identical low side and high side switch with identical RG PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Notes: Subject to final datasheet on GOFORD official website. Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit PRELIMINARY
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Notes: Subject to final datasheet on GOFORD official website. PRELIMINARY