GC11N60F GOFORD | Alldatasheet

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Technical content

Description

The GC11N60 usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. GeneralFeatures

  • Newtechnologyforhighvoltagedevice
  • Lowon-resistanceandlowconductionlosses
  • SmallPackage
  • UltraLowGateChargecauselowerdrivingrequirement
  • 100%AvalancheTested
  • RoHSCompliant Application
  • Power FactorCorrection(PFC)
  • SwitchedModePowerSupply(SMPS)
  • UninterruptiblePowerSupply(UPS) Markin g andPinAssi g nment G O F O R D GC11N60 AbsoluteMaximumRatings(TC=25℃ unlessotherwisenoted) ThermalCharacteristic Parameter Symbol Value UnitTO-252 TO-220 TO-220F ThermalResistance,Junction-to-Case RthJC 1.6 4 ℃/W ThermalResistance,Junction-to-Ambient(Note2) RthJA 62 80 ℃/W V DS R DS (ON ) @10V(Typ) I D 600V 290mΩ 11A Parameter Symbol Value UnitTO-252 TO-220 TO-220F Drain-SourceVoltage VDS 600 V Gate-SourceVoltage VGS ±30 V DrainCurrent-Continuous ID 11 A DrainCurrent-Pulsed(Note1) IDM 33 A SinglePulseAvalancheEnergy(Note2) EAS 210 mJ AvalancheCurrent(Note1) IAR 1.8 A RepetitiveAvalancheEnergy(Note1) EAR 0.32 mJ MaximumPowerDissipation PD 78 31.3 W OperatingJunctionandStorageTemperatureRange TJ,TSTG -55To150 ℃ D S SchematicDiagram G  Ordering Information Part Number Marking Case Packaging GC11N60K TO-252 TO-220 TO-220F 50pcs/Tube 50pcs/Tube 2500pcs/Reel GC11N60T GC11N60F GC11N60 GC11N60 GC11N60 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

ElectricalCharacteristics(TJ=25℃ unlessotherwisenoted) Parameter Symbol Condition Min Typ Max Unit On/Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0VID=250μA 600 - V ZeroGateVoltageDrainCurrent(TJ=25℃ ) IDSS VDS=650V,VGS=0V - - 1 μA ZeroGateVoltageDrainCurrent(TJ=150℃ ) IDSS VDS=650V,VGS=0V - - 100 μA Gate-BodyLeakageCurrent IGSS VGS=±30V,VDS=0V - - ±100 nA OnCharacteristics(Note3) GateThresholdVoltage VGS(th) VDS=VGS,ID=250μA 2.5 4 V Drain-SourceOn-StateResistance RDS(ON) VGS=10V,ID=5.5A - 290 330 mΩ ForwardTransconductance gFS VDS=10V,ID=5.5A - - - S DynamicCharacteristics(Note4) InputCapacitance Clss VDS=50V,VGS=0V, F=1.0MHz - 857 - PF OutputCapacitance Coss - 31 - PF ReverseTransferCapacitance Crss - 1.5 - PF SwitchingCharacteristics(Note4) Turn-onDelayTime td(on) VDD=400V,ID=11A VGS=10V,RGEN=25Ω - 28 - nS Turn-onRiseTime tr - 61 - nS Turn-OffDelayTime td(off) - 89 - nS Turn-OffFallTime tf - 41 - nS TotalGateCharge Qg VDD=480V,ID=11A,VGS=10V - 19 - nC Gate-SourceCharge Qgs - 4.8 - nC Gate-DrainCharge Qgd - 7.2 - nC Drain-SourceDiodeCharacteristics ContinuousBodyDiodeCurrent (Note2) IS TC=25℃ - - 11 A PulsedDiodeForwardCurrent ISM TC=25℃ 33 A DiodeForwardVoltage(Note3) VSD TJ=25℃, ISD=11A,VGS=0V - - 1.2 V ReverseRecoveryTime trr VR=400V,IF=IS, diF/dt=100A/μs 377 nS ReverseRecoveryCharge Qrr 3.4 μC PeakReverseRecoveryCurrent Irrm - 17.8 - A Notes: 1. RepetitiveRating: Pulsewidth limited bymaximum junctiontemperature. 2. IAS = 1.6A,VDD =50V,RG =25Ω,StartingTJ =25°C 3. PulseTest: PulseWidth ≤300μs,DutyCycle≤1%. 4. Guaranteedby design,notsubjecttoproduction GC11N60 - - - - - - www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

Capacitance（PF） TypicalElectricalAndThermalCharacteristics td(on) ton tr td(off) toff tf Vgs Vout VOUT 10% 90% INVERTED 90% 10% VIN 10% 50% 50% PULSE WIDTH 90% Figure1.SwitchingTestCircuit Figure2.SwitchingWaveforms V D S D r a i n t o S o u r c e V o l t a g e V D D r a i n C u r r e n t A Figure5.OnResistancevs.DrainCurrent Vdd Vin Rl D Rgen G S ID-DrainCurrent(A） ID-DrainCurrent(A)Rdson-OnResistance(Ω) Figure3.OutputCharacteristics Figure4 TransferCharateristics VGS-Gate toSourceVoltage(V) Figure6.Capacitance GC11N60 VDS-Drain to Source Voltage(V) I www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

Qg-TotalGate Charge (nC) Figure7.GateCharge TJ-Junction Temperature (℃) Figure9.RdsonvsTJ Tp- PulseWidth(s) Figure11.TransientThermal Impedance(TO-252,TO-220) VSD-Source toDrainVoltage (V) Figure8.BodyDiodeForwardVoltage TJ-Junction Temperature (℃) Figure10.VthvsTJ Tp- PulseWidth(s) F i g u r e T r a n s i e n t T h e r m a l I m p e d a n c e T O F VGS-Gate toSourceVoltage(V)Rdson-(Normalized)ZthJC- ThermalImpedance(K/W) VGS(th) (Variance) IS-Source current(A) GC11N60 ZthJC- ThermalIm edance K/W www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

D A L (L1) θ H E c b e SYMBOL MIN NOM MAX mm 2.20 2.30 2.40 0.97 1.07 1.17 0.68 0.78 0.90 5.20 5.33 5.50 0.43 0.53 0.63 5.98 6.10 6.22 5.30REF 6.40 6.60 6.80 4.63 - - 2.286BSC 9.40 10.10 10.50 1.38 1.50 1.75 2.90REF 0.51BSC 0.88 - 1.28 0.50 - 1.00 1.65 1.80 1.95 0° 8°- 0.00 - 0.20 θ A b c D E e H L COMMON DIMENSIONS GOFORD GC11N60 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

A 4.37 4.57 4.70 1.25 1.30 1.40 2.20 2.40 2.60 b 0.70 0.80 0.95 1.70 1.27 1.47 c 0.45 0.50 0.60 D 15.10 15.60 16.10 8.80 9.10 9.40 5.50 E 9.70 10.00 10.30 7.00 e 2.54BSC 5.08BSC 6.25 6.50 6.85 L 12.75 13.50 13.80 3.10 3.40 Ⱦ P 3.40 3.60 3.80 Q 2.60 2.80 3.00 E Q D 䌙㻼 b L e A c COMMONDIMENSIONS GOFORD GC11N60 www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

HTTP://www.gofordsemi.com T E L 961262 F A X GOFORD GC11N60 A C E D L (L1) e 䌙㻼㻟 SYMBO mm MIN NOM MAX E 9.96 10.16 10.36 A 4.50 4.70 4.90 2.34 2.54 2.74 0.30 0.45 0.60 2.56 2.76 2.96 c 0.40 0.50 0.65 1.20 1.30 1.35 D 15.57 15.87 16.17 6.70REF e 2.54BSC L 12.68 12.98 13.28 2.93 3.03 3.13 Ⱦ P 3.03 3.18 3.38 Ⱦ 3.15 3.45 3.65 3.15 3.30 3.45 1.25 1.35 1.55 1.18 1.28 1.43 0.70 0.80 0.95 COMMONDIMENSIONS 䌙㻼