GC080N65QF GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.3) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current ID 50 A Pulsed Drain Current (note1) IDM 156 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 298 W Single pulse avalanche energy （note2） EAS 780 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 0.32 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GC080N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 650V l ID (at VGS = 10V) 50A l RDS(ON) (at VGS = 10V) < 90mΩ l 100% Avalanche Tested l RoHS Compliant l Ultra-fast body diode Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging GC080N65QF TO-247 GC080N65F 30pcs/Tube Schematic diagram TO-247 G D S

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.3) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 20 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3 -- 5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 16A -- 70 90 mΩ gFS VGS = 20V, ID = 25A -- 20 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 380V, f = 1.0MHz -- 4900 -- pFOutput Capacitance Coss -- 100 -- Reverse Transfer Capacitance Crss -- 4.8 -- Total Gate Charge Qg VDD = 380V, ID = 26A, VGS = 10V -- 100 -- nCGate-Source Charge Qgs -- 28 -- Gate-Drain Charge Qgd -- 49 -- Turn-on Delay Time td(on) VDD = 380V, ID = 26A, RG = 4.7Ω -- 27 -- ns Turn-on Rise Time tr -- 26 -- Turn-off Delay Time td(off) -- 97 -- Turn-off Fall Time tf -- 17 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 50 A Body Diode Voltage VSD TJ = 25ºC, ISD = 16A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 26A, VGS = 0V di/dt=100A/us -- 1.2 -- nC Reverse Recovery Time Trr -- 160 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.3)