GC030N65QF GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current ID 80 A Pulsed Drain Current (note1) IDM 240 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 625 W Single pulse avalanche energy （note2） EAS 3850 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 0.2 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GC030N65QF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 650V l ID (at VGS = 10V) 80A l RDS(ON) (at VGS = 10V) < 30mΩ l 100% Avalanche Tested l Improved dv/dt Capability l Ultra-fast body diode Application l Solar inverters l LCD/LED/PDP TV l Telecom/Server Power supplies l AC-DC Power Supply

Ordering Information

Device Package Marking Packaging GC030N65QF TO-247 GC030N65F 30pcs/Tube Schematic diagram TO-247 G D S PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 10 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 4.0 5.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 40A -- 24 30 mΩ gFS VGS = 5V, ID = 40A -- 43 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V,VDS = 400V, f = 1MHz -- 9500 -- pFOutput Capacitance Coss -- 150 -- Reverse Transfer Capacitance Crss VGS = 0V,VDS = 400V, f = 200KHz -- 8 -- Total Gate Charge Qg VDD = 400V, ID = 40A, VGS = 10V -- 240 -- nCGate-Source Charge Qgs -- 20 -- Gate-Drain Charge Qgd -- 55 -- Turn-on Delay Time td(on) VDD = 400V, ID = 40A, RG = 4.7Ω -- 42 -- ns Turn-on Rise Time tr -- 24 -- Turn-off Delay Time td(off) -- 294 -- Turn-off Fall Time tf -- 11 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 80 A Body Diode Voltage VSD TJ = 25ºC, ISD = 40A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 40A, VGS = 0V di/dt=100A/us -- 2.9 -- μC Reverse Recovery Time Trr -- 242 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=10mH,Rg=25Ω 3. Identical low side and high side switch with identical RG PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) PRELIMINARY