G90P04K GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1572-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Continuous Drain Current ID -90 A Pulsed Drain Current (note1) IDM -360 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 150 W Single pulse avalanche energy （note2） EAS 324 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 0.83 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G90P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -40V l ID (at VGS = -10V) -90A l RDS(ON) (at VGS = -10V) < 7.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G90P04K TO-252 G90P04 2500pcs/Reel Schematic diagram TO-252
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1572-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A -- 5.8 7.5 mΩ gFS VDS = -5V,ID = -20A -- 41 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1.0MHz -- 6331 -- pFOutput Capacitance Coss -- 675 -- Reverse Transfer Capacitance Crss -- 612 -- Total Gate Charge Qg VDD = -20V, ID = -20A, VGS = -10V -- 97 -- nCGate-Source Charge Qgs -- 22.5 -- Gate-Drain Charge Qgd -- 17 -- Turn-on Delay Time td(on) VDD = -20V, ID = -20A, RG = 3Ω -- 18.5 -- ns Turn-on Rise Time tr -- 20 -- Turn-off Delay Time td(off) -- 67.5 -- Turn-off Fall Time tf -- 14 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -90 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -20A, VGS = 0V di/dt= -500A/us -- 1090 -- nC Reverse Recovery Time Trr -- 90 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1572-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1572-V1.1) Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.2 2.3 2.4 A1 0 0.2 A2 0.97 1.07 1.17 b 0.68 0.78 0.9 b3 5.2 5.33 5.5 c 0.43 0.53 0.63 D 5.98 6.1 6.22 D1 5.30REF E 6.4 6.6 6.8 E1 4.63 e 2.286BSC H 9.4 10.1 10.5 L 1.38 1.5 1.75 L1 2.90REF L2 0.51BSC L3 0.88 1.28 L4 0.5 1 L5 1.65 1.8 1.95 θ 0° 8°