G90P04F GOFORD | Alldatasheet
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www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1570)
Description
The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -40V l ID (at VGS = -10V) -68A l RDS(ON) (at VGS = -10V) < 7.5mΩ l RDS(ON) (at VGS = -4.5V) < 10mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging G90P04F TO-220F G90P04 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Continuous Drain Current ID -68 A Pulsed Drain Current (note1) IDM -272 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 83 W Single pulse avalanche energy （note2） EAS 306 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.5 ºC/W Schematic diagram TO-220F P-Channel Enhancement Mode Power MOSFET
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1570) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.5 -2.5 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -20A -- 34 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -20V, f = 1.0MHz -- 6371 -- pFOutput Capacitance Coss -- 676 -- Reverse Transfer Capacitance Crss -- 605 -- Total Gate Charge Qg VDD = -20V, ID = -34A, VGS = -10V -- 42 -- nCGate-Source Charge Qgs -- 7 -- Gate-Drain Charge Qgd -- 10 -- Turn-on Delay Time td(on) VDD = -20V, ID = -34A, RG = 3Ω -- 10 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 38 -- Turn-off Fall Time tf -- 24 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -68 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Time Trr IF = -12A, VGS = 0V di/dt=-100A/us -- 40 -- nC Reverse Recovery Charge Qrr -- 42 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=-40V,VGS=-10V,L=0.5mH,Rg=25Ω Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1570) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1570)