G8N03LL GOFORD | Alldatasheet
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Technical content
Features
5.6
- Operating Junction Temperature Range : -55°C to +150°C
- Storage Temperature Range: -55°C to +150°C
- Maximum Thermal Resistance: 78°C/W Junction to Case(Note1) Rating ± 20 Parameter Gate-Source Volltage Drain-Source Voltage 30 ID Marking:8N03 Internal Structure D D G D D S 1 2 3 6 5 4 G8N03LLGOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µ A 30 V Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V 1 µA Gate-Source Leakage Current IGSS VDS =0V, VGS =± 20V ± 100 nA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µ A 1 1.4 3 V VGS=10V, ID=8A 9 14 VGS=4.5V, ID=8A 11 16 Forward Tranconductance gFS VDS=5V, ID=8A 30 S Input Capacitance Ciss 900 Output Capacitance Coss 300 Reverse Transfer Capacitance Crss 50 Turn-On Delay Time td(on) 15 Turn-On Rise Time tr 10 Turn-Off Delay Time td(off) 45 Turn-Off Fall Time tf 12 Total Gate Charge Qg 13 Gate-Source Charge Qgs 3.2 Gate-Drain Charge Qgd 2.0 Drain-Source Diode Forward Current IS 8 A Diode Forward Voltage(Note 3) VSD VGS=0V, IS=8A 1.2 V Note: 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 2%. 4. uaranteed by Design, Not Subject to Production Testing. nsVGS=10V,VDD=25V,ID=1A, RGEN=6Ω mΩ VDS=15V,VGS=0V,f =1MHz pF Electrical Characteristics @ 25° C (Unless Otherwise Specified) Off Characteristics Dynamic Characteristics(Note 4) On Characteristics(Note 3) Drain-Source Diode Characteristics and Maximum Ratings Drain-Source On-Resistance RDS(on) Switching Characteristics(Note 4) VDS=15V, ID=8A,VGS=5V nC G8N03LLGOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
TC=-55°C TC=125°C Drain Current (A) Gate To Source Voltage (V) Fig. 2 - Transfer Characteristics TC=25°C 0 5 20 25 VDS=15V ID=8A Gate-Source Voltage (V) 10 15 Gate Charge(nC) Fig. 3 - Gate Charge Characteristics 0 0 1 04 5 0 VGS=10V VGS=4.5V TA=25°C Pulsed Drain-Source On-Resistance (mΩ) 203 0 Drain Current (A) Fig. 1 - RDS(ON)—ID 100 0.0 0.2 1.0 1.2 TJ=150°C 0.4 0.6 0.8 Source To Drain Voltage (V) Source Current (A) Fig. 4 - IS—VSD TJ=25°C G8N03LLGOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466