G80P03D5 GOFORD | Alldatasheet
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www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1573） ®GOFORD General Description The G80P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -30V l ID (at VGS = 10V) -65A l RDS(ON) (at VGS = 10V) < 6mΩ l RDS(ON) (at VGS = 4.5V) < 8mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging G80P03D5 DFN5*6 G80P03 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -65 A Pulsed Drain Current (note1) IDM -260 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 63 W Single pulse avalanche energy （note2） EAS 196 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.98 ºC/W Schematic diagram P-Channel Enhancement Mode Power MOSFET D G S DFN5*6 pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1573） ®GOFORD Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID =- 250µA -1 -1.5 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -30A -- 5 6 mΩ gFS VDS = -5V,ID = -30A -- 62 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 5386 -- pFOutput Capacitance Coss -- 718 -- Reverse Transfer Capacitance Crss -- 673 -- Total Gate Charge Qg VDD = -15V, ID = -30A, VGS = -10V -- 95 -- nCGate-Source Charge Qgs -- 18 -- Gate-Drain Charge Qgd -- 19 -- Turn-on Delay Time td(on) VDD = -15V, ID = -30A, RG = -2.5Ω -- 12 -- ns Turn-on Rise Time tr -- 60 -- Turn-off Delay Time td(off) -- 80 -- Turn-off Fall Time tf -- 65 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -65 A Body Diode Voltage VSD TJ = 25ºC, ISD = -30A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -25A, VGS = 0V di/dt=-100A/us -- 60 -- nC Reverse Recovery Time Trr -- 52 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1573） ®GOFORD