G800P06LL GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -3.5 A Pulsed Drain Current (note1) IDM -14 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62.5 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G800P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -3.5A l RDS(ON) (at VGS = -10V) < 80mΩ l RDS(ON) (at VGS = -4.5V) < 100mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G800P06LL SOT-23-6L G800P06 3000pcs/Reel Schematic diagram SOT-23-6L

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.5 -3 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -15V,ID = -3.1A -- 8.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 650 -- pFOutput Capacitance Coss -- 95 -- Reverse Transfer Capacitance Crss -- 60 -- Total Gate Charge Qg VDD = -30V, ID = -3.1A, VGS = -4.5V -- 12 -- nCGate-Source Charge Qgs -- 2.2 -- Gate-Drain Charge Qgd -- 3.7 -- Turn-on Delay Time td(on) VDD = -30V, ID = -2.4A, RG = 1Ω -- 45 -- ns Turn-on Rise Time tr -- 105 -- Turn-off Delay Time td(off) -- 60 -- Turn-off Fall Time tf -- 45 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -14 A Body Diode Voltage VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466