G6N02L GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1506-V1.3) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 6 A Pulsed Drain Current (note1) IDM 24 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 120 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G6N02L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 20V l ID (at VGS = 10V) 6A l RDS(ON) (at VGS = 4.5V) < 12mΩ l RDS(ON) (at VGS = 2.5V) < 18mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G6N02L SOT-23-3 G6N02 3000pcs/Reel Schematic diagram SOT-23-3 pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1506-V1.3) Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 0.7 0.9 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 3A -- 9.8 12 mΩ VGS = 2.5V, ID = 3A -- 15 18 gFS VGS = 5V, ID = 3A -- 24 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 1151 -- pFOutput Capacitance Coss -- 160 -- Reverse Transfer Capacitance Crss -- 152 -- Total Gate Charge Qg VDD = 4.5V, ID = 6A, VGS = 10V -- 12.5 -- nCGate-Source Charge Qgs -- 1.2 -- Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) VDD = 4.5V, ID = 3A, RG = 3Ω -- 2.7 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 37 -- Turn-off Fall Time tf -- 7 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 6 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1506-V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1506-V1.3) Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.80 2.90 3.00 B 1.50 1.60 1.70 C 1.00 1.10 1.20 D 0.30 0.40 0.50 E 0.25 0.40 0.55 G 1.90 H 0.00 - 0.10 J 0.047 0.127 0.207 K 2.60 2.80 3.00 All Dimensions in mm