G69A GOFORD | Alldatasheet

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Technical content

Description

The G69A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features

  • Advanced trench MOSFET process technology
  • Ultra low on-resistance with low gate charge Application
  • PWM applications
  • Load switch
  • Battery charge in cellular handset D G S Schematic diagram Pin assignment Absolute maximum ratings (T C =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -12 V Gate-Source Voltage V GS ±8 V Drain Current-Continuous I D -16 A Drain Current -Pulsed (Note 1) I DM -65 A Maximum Power Dissipation P D 18 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R θJC 6.9 /W℃ V D S S R D S O N I D A - 4.5V @ (typ) Ωm-12V G69A GOFORD DFN2X2-6L (thickness 0.5cm) RoHS Compliant

Ordering Information

Part Number Marking Packaging Case G69A DFN2*2-6L 3000pcs/Reel G69A www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

Electrical characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V (BR) DSS V GS =0V I D =-250μA -12 - - V Zero Gate Voltage Drain Current I DSS V DS =-12V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±8V, V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D V GS =-4.5V, I D =-6A - 12 21 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-4A - 15 27 mΩ Forward Transconductance g FS V DS =-5V,I D =-6.7A 20 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 2700 - PF Output Capacitance C oss - 680 - PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz - 590 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 35 - nS Turn-Off Delay Time t d(off) - 30 - nS Turn-Off Fall Time t f V DD =-10V,I D =-1A V GS =-4.5V,R GEN =10Ω - 10 - nS Total Gate Charge Q g - 35 48 nC Gate-Source Charge Q gs - 5 - nC Gate-Drain Charge Q gd V DS =-6V,I D =-10A, V GS =-4.5V - 10 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-8A - - -1.2 V Diode Forward Current (Note 2) I S - - -16 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production G69A GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

E D e b c L A h LASER MARK PIN 1 I.D. /gid00053 /gid00048 /gid00049 /gid00001/gid00055 /gid00042/gid00038 /gid00056 /gid00052 /gid00042/gid00037 /gid00038 /gid00001/gid00055 /gid00042/gid00038 /gid00056 /gid00035 /gid00048 /gid00053 /gid00053 /gid00048 /gid00046 /gid00001/gid00055 /gid00042/gid00038 /gid00056 SYMBOL MIN NOM MAX mm 0.70 0.75 0.80 NA 0.02 0.05 0.20 0.27 0.34 1.95 2.00 2.07 0.80 0.90 1.00 0.90 1.00 1.10 0.20 0.30 0.40 0.65 0.75 0.85 0.20 0.25 0.35 0.20 0.25 0.30 0.65BSC A b 0.18 0.20 0.25 c 1.95 2.00 2.07 D E L h e COMMON DIMENSIONS GOFORD G69A www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466