G66 GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
The G66 uses advanced trench technology to provide excellent Rosion), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. IS General Features Schematic diagram e Voss | Rosny | Rosion) | Ip D (@-4. 5viTyp) |@2.5v(TyP -16V 33 mQ. 45m0. -5.8A @ High Power and current handing capability G Ss Ss @ Lead free product is acquired Marking and pin Assignment @ Surface Mount Package Ka Application @PWM applications @Load switch @Power management Absolute Maximum Ratings (TA=25‘Cunless otherwise noted) [Parameter «| «Symmbol [Lime ‘(Unt ‘| [Dean Conen-contnoous——SSCSCSCSCSC~S~“~irSS [Dean Coren Puseg™ Tt [Maximum PoverDsspaion ———SSSSCSCS~SY Thermal Characteristic Electrical Characteristics (TA=25‘C unless otherwise noted) [|___— Parameter | Symbot | Condition | min | Typ | Max | unit | www.goford.cn TEL: 0755-29961099 FAX: 0755-29961466 Page 1
Drain-Source Breakdown Voltage Voes=0V Ip=-250pA [- [as] - [ v | Zero Gate Voltage Drain Current [loss | Vps=-20V,Ves=0V [- [| - [7 [ 1 | On Characteristics “°°? Vos=-4.5V, Ib=-4.1A Drain-Source On-State Resistance | =| | + | mQ Dynamic Characteristics “°°” on = oi _ Vos=-4V,Ves=0V, = — mE [ou capacance |e] [= [ao] put Cap: “ F=1,0MHz Switching Characteristics “°°” Turon Delay Time p= [2 - [ss | Gate-Source Charge [Qu | Vos=-4Vio=-4.1AVes=45v] - [12] - [ nc | Drain-Source Diode Characteristics Notes: 41. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t< 10 sec. 3. Pulse Test: Pulse Width < 300ys, Duty Cycle < 2%. 4. Guaranteed by design, not subject to production www.goford.cn TEL: 0755-29961099 FAX: 0755-29961466 Page 2
2.0 N 1.6 re ae g hari 1.6 & B14 Ee 12 xc 5 u ° | | 8 ir = 25° 36 0.8 ¢ 3 OD 04 f 5
0.0 A 08
0.0 0.5 1.0 15 2.0 0 25 50 75 100 125 150 175 Vgs Gate-Source Voltage (V) T,-Junction Temperature(‘C) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance 0.20 1200 8 0.16 i—< = 900 eS > Q é 2 cool | 6 0.08 s \\ | § Ty = 125°C 2 Coss ° 1 2 3 4 5 o 2 4 6 8 Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds 45 ? ee = a6 Vos a4v | | /\\_| = 10 a £ J | 5 ae $e ? SSS ae g fl IAL IL 5 ” PAL fe
5 A a fff
8 ‘8 | WV oot Gembed | 2 /T_| g fff 56° 2 0001 ff = 55 S Vit it ft tl + — Ff SF oo 0.001 (2b 7 0.0 15 3.0 45 6.0 75 9.0 0 02 04 06 08 1 12 Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward www.goford.cn TEL: 0755-29961099 FAX: 0755-29961466 Page 4
[1 Limited by Rosion)* CET Tr @ .ePeettihee se = ESSER SSRIS atti e Po INT STR TIN 1 ms rn 8 tLe ETNIES TRE tome ll = PES OH i Soe F190 ms HH FS Pri SS i ee Se rT oss oes STI oorL_L TUT STU 01 1 10 100 Vds Drain-Source Voltage (V) Figure 13 Safe Operation Area g aS a ee 2 re ttt tt te Q oO eee eee pee ee) ee © SS SS SS SS es SE JO Oe — me Tt —t tte =e a eer Us 2 ere in pe) ee ce 3 er ae EE lassie arose ee ees a | E Pr Po Sz pe 23 , Se dot | Heat ra | ee ar SSS: = ee ee 2. * s EE RVAL RESP ONS te ec he EE Notes: tT uty tactor = tt 2 op tee LET UT TTT he ek ts =P ome Zina +Ta ‘loccot 0001 ‘001 oot a1 7 10 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goford.cn TEL: 0755-29961099 FAX: 0755-29961466 Page 5