G65P06D5 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -65 A Pulsed Drain Current (note1) IDM -260 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 104 W Single pulse avalanche energy （note2） EAS 156 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 1.2 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -65A l RDS(ON) (at VGS = -10V) < 18mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G65P06D5 DFN5*6-8L G65P06 5000pcs/Reel DFN5*6-8L Schematic diagram pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A -- 13.5 18 mΩ gFS VDS = -5V,ID = -20A -- 37 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 6138 -- pFOutput Capacitance Coss -- 333 -- Reverse Transfer Capacitance Crss -- 345 -- Total Gate Charge Qg VDD = -30V, ID = -30A, VGS = -10V -- 75 -- nCGate-Source Charge Qgs -- 16 -- Gate-Drain Charge Qgd -- 19 -- Turn-on Delay Time td(on) VDD = -30V, ID = -30A, RG = 3Ω -- 18 -- ns Turn-on Rise Time tr -- 20 -- Turn-off Delay Time td(off) -- 55 -- Turn-off Fall Time tf -- 35 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -65 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -30A, VGS = 0V di/dt=-100A/us -- 0.77 -- nC Reverse Recovery Time Trr -- 0.13 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 3. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1468-V1.1)