G5N20J

G5N20J GOFORD | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 7

Technical content

Features

• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Application
• DC Motor Control and Class D Amplifier
• Uninterruptible Power Supply (UPS)
• Automotive G5N20JGOFORD TO-251 VDSS RDS(ON) ID 0.44 5A 10V @ (Typ) Ω200V

Description

• RoHS Compliant

Ordering Information

Part Number Marking Packaging G5N20J TO-251 75pcs/Tube Case 5N20A www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 Schematic diagram

Electrical Characteristics TC =25℃ unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Unit s Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage V GS = 0V,ID = 250µA 200 - - V △V(BR)DSS /△TJ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID = 250µA - 0.25 - V/℃ VDS = 200V, VGS = 0V - - 1 µA IDSS Zero Gate Voltage Drain Current VDS = 160V, TC = 125℃ - - 10 µA IGSS Gate to Body Leakage Current V DS = 0V, VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate Threshold Voltage note4 V DS = VGS , ID = 250µ R DS(on) Static Drain-Source On-Resistance V GS =10V, ID = 2.5A - 0.44 0.58 Ω gFS Forward Transconductance V DS =30V, ID = 2.5A - 5.2 - S Dynamic Characteristics C iss Input Capacitance - 255 - pF C oss Output Capacitance - 30.2 - pF C rss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 2.3 - pF Q g Total Gate Charge - 10.8 - nC Q gs Gate-Source Charge - 1.7 - nC Q gd Gate-Drain(“Miller”) Charge VDD = 160V, ID = 5A, VGS = 10V - 3.1 - nC Switching Characteristics td(on) Turn-On Delay Time - 7.33 - ns tr Turn-On Rise Time - 10.7 - ns td(off) Turn-Off Delay Time - 18.2 - ns tf Turn-Off Fall Time VDD = 100V, ID = 5A, RG = 10Ω, VGS = 10V - 11.9 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 5 A ISM Maximum Pulsed Drain to Source Diode Forward Curre nt - - 20 A VSD Drain to Source Diode Forward Voltage V GS = 0V, IS = 5A - - 1.4 V trr Reverse Recovery Time - 125.5 - ns Q rr Reverse Recovery Charge VGS = 0V, IF = 5A, di/dt =100A/µs - 357 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25° C 3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS , Starting TJ = 25° C 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. G5N20JGOFORD A 1 1.55 3 V www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466

Figure 14. Peak Diode Recovery d v / d t T e s t C i r c u i t & Waveforms (For N-channel)

H 15° D (L1) 0.75REF E b2’ b e 印字面 L5 L3 c c A SYMBOL MIN NOM MAX mm 2.20 2.30 2.40 0.97 1.07 1.17 0.68 0.78 0.90 5.20 5.33 5.50 0.43 0.53 0.63 5.98 6.10 6.22 5.30REF 6.40 6.60 6.80 4.63 - - 2.286BSC 16.22 16.52 16.82 9.15 9.40 9.65 A b 0.00 0.04 0.10b2 0.00 0.04 0.10b2’ c D E e H 0.88 1.02 1.28L3 1.65 1.80 1.95L5 COMMON DIMENSIONS G5N20JGOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466