G58N06F GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1633) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 35 A Pulsed Drain Current (note1) IDM 140 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 44 W Single pulse avalanche energy （note2） EAS 100 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W Maximum Junction-to-Case RthJC 2.8 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G58N06F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 35A l RDS(ON) (at VGS = 10V) < 13mΩ l RDS(ON) (at VGS = 4.5V) < 15mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G58N06F TO-220F G58N06 50pcs/Tube TO-220F D G S Schematic diagram
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1633) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS =60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.9 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 10 13 mΩ VGS = 4.5V, ID = 25A -- 12 15 gFS VGS = 5V, ID = 30A -- 83 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 3006 -- pFOutput Capacitance Coss -- 161 -- Reverse Transfer Capacitance Crss -- 143 -- Total Gate Charge Qg VDD = 30V, ID = 30A, VGS = 10V -- 75 -- nCGate-Source Charge Qgs -- 13.5 -- Gate-Drain Charge Qgd -- 19.5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 30A, RG = 3Ω -- 60 -- ns Turn-on Rise Time tr -- 21 -- Turn-off Delay Time td(off) -- 69 -- Turn-off Fall Time tf -- 48 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 35 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 30A, VGS = 0V di/dt=100A/us -- 147 -- nC Reverse Recovery Time Trr -- 87 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1633) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1633)