G45P02D3 GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1447-V1.4) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Continuous Drain Current ID -45 A Pulsed Drain Current (note1) IDM -180 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 29 W Single pulse avalanche energy （note2） EAS 81 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 75 ºC/W Maximum Junction-to-Case RthJC 4.2 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -20V l ID (at VGS = -10V) -45A l RDS(ON) (at VGS = -4.5V) < 7.5mΩ l RDS(ON) (at VGS = -2.5V) < 10mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G45P02D3 DFN3x3-8L G45P02 5000pcs/Reel Schematic diagram pin assignment DFN3x3-8L

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1447-V1.4) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.4 -0.65 -1 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -10A -- 72 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 4867 -- pFOutput Capacitance Coss -- 642 -- Reverse Transfer Capacitance Crss -- 593 -- Total Gate Charge Qg VDD = -10V, ID = -10A, VGS = -10V -- 44 -- nCGate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 11 -- Turn-on Delay Time td(on) VDD = -10V, ID = -10A, RG = 3Ω -- 18 -- ns Turn-on Rise Time tr -- 32 -- Turn-off Delay Time td(off) -- 136 -- Turn-off Fall Time tf -- 59 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -45 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -10A, VGS = 0V di/dt=-500A/us -- 100 -- nC Reverse Recovery Time Trr -- 33 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-20V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1447-V1.4) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1447-V1.4) DFN3x3-8L Package Information