G450N06HA GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 4.3 Pulsed Drain Current (note1) IDM 24 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.15 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 175 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 130 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G450N06HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS 60V l ID (at VGS = 10V) 6A l RDS(ON) (at VGS = 10V) < 45mΩ l RDS(ON) (at VGS = 4.5V) < 50mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G450N06HA SOT-223 G450N06 2500psc/Reel Schematic diagram SOT-223
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 36 45 mΩ VGS = 4.5V, ID = 3A -- 40 50 gFS VGS = 5V, ID = 5A -- 17 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 765 -- pFOutput Capacitance Coss -- 46 -- Reverse Transfer Capacitance Crss -- 40 -- Total Gate Charge Qg VDD = 30V, ID = 5A, VGS = 10V -- 8.9 -- nCGate-Source Charge Qgs -- 2.4 -- Gate-Drain Charge Qgd -- 1.4 -- Turn-on Delay Time td(on) VDD = 30V, ID = 5A, RG = 3Ω -- 4.5 -- ns Turn-on Rise Time tr -- 2.5 -- Turn-off Delay Time td(off) -- 14.5 -- Turn-off Fall Time tf -- 3.5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 6 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0)