G40P03D5 GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1571) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -35 A Pulsed Drain Current (note1) IDM -140 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 48 W Single pulse avalanche energy （note2） EAS 90 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 2.6 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G40P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -30V l ID (at VGS = -10V) -35A l RDS(ON) (at VGS = -10V) < 10mΩ l RDS(ON) (at VGS = -4.5V) < 14mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G40P03D5 DFN5*6-8L G40P03 5000pcs/Reel Schematic diagram DFN5X6-8L pin assignment

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1571) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.4 -2.5 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -20A -- 37 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 2716 -- pFOutput Capacitance Coss -- 331 -- Reverse Transfer Capacitance Crss -- 324 -- Total Gate Charge Qg VDD = -15V, ID = -20A, VGS = -10V -- 50 -- nCGate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 12 -- Turn-on Delay Time td(on) VDD = -15V, ID = -20A, RG = 3Ω -- 12.5 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 125 -- Turn-off Fall Time tf -- 66 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -35 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -20A, VGS = 0V di/dt=-500A/us -- 62 -- nC Reverse Recovery Time Trr -- 32 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1571) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1571)