G400P06S GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -6 A Pulsed Drain Current (note1) IDM -24 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.7 W Single pulse avalanche energy （note2） EAS 144 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 75 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G400P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -6A l RDS(ON) (at VGS = -10V) < 40mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G400P06S SOP-8 G400P06 4000pcs/Reel Schematic diagram SOP-8 pin assignment

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.5 -3 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -12A -- 33 40 mΩ gFS VDS = -5V,ID = -12A -- 15 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 2506 -- pFOutput Capacitance Coss -- 112 -- Reverse Transfer Capacitance Crss -- 110 -- Total Gate Charge Qg VDD = -30V, ID = -12A, VGS = -10V -- 46 -- nCGate-Source Charge Qgs -- 10 -- Gate-Drain Charge Qgd -- 9 -- Turn-on Delay Time td(on) VDD = -30V, ID = -12A, RG = 3Ω -- 10 -- ns Turn-on Rise Time tr -- 6 -- Turn-off Delay Time td(off) -- 44 -- Turn-off Fall Time tf -- 12 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -6 A Body Diode Voltage VSD TJ = 25ºC, ISD = -12A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -12A, VGS = 0V di/dt=-100A/us -- 47 -- nC Reverse Recovery Time Trr -- 34 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1598)