G3K8N15HE GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1772-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 150 V Continuous Drain Current ID 2 A Pulsed Drain Current (note1) IDM 8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.16 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambientt, t≤10s RthJA 58 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G3K8N15HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 150V l ID (at VGS = 10V) 2A l RDS(ON) (at VGS = 10V) < 370mΩ l RDS(ON) (at VGS = 4.5V) < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)> 2.5KV Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G3K8N15HE SOT-223 G3K8N15 2500psc/cReel Schematic diagram SOT-223
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1772-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 150 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 2.0 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 2A -- 300 370 mΩ VGS = 4.5V, ID = 2A -- 315 390 gFS VGS = 5V, ID = 2A -- 5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 75V, f = 1.0MHz -- 558 -- pFOutput Capacitance Coss -- 17 -- Reverse Transfer Capacitance Crss -- 13 -- Total Gate Charge Qg VDD = 75V, ID = 2A, VGS = 10V -- 20 -- nCGate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 5 -- Turn-on Delay Time td(on) VDD = 75V, ID = 2A, RG = 6Ω -- 8 -- ns Turn-on Rise Time tr -- 11 -- Turn-off Delay Time td(off) -- 21 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 2 A Body Diode Voltage VSD TJ = 25ºC, ISD = 2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 2A, VGS = 0V di/dt=100A/us -- 266 -- nC Reverse Recovery Time Trr -- 103 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1772-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1772-V1.0)