G350N06D32 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 10 A Pulsed Drain Current (note1) IDM 40 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 20 W Single pulse avalanche energy （note2） EAS 36 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 6.25 ºC/W DUAL N-Channel Enhancement Mode Power MOSFET
Description
The G350N06D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 10A l RDS(ON) (at VGS = 10V) < 35mΩ l RDS(ON) (at VGS = 4.5V) < 40mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G350N06D32 DFN3X3-8L Dual G350N06D 5000pcs/Reel Schematic diagram DFN3X3-8L Dual pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 29 35 mΩ VGS = 4.5V, ID = 5A -- 32 40 gFS VGS = 5V, ID = 5A -- 12 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 1330 -- pFOutput Capacitance Coss -- 57 -- Reverse Transfer Capacitance Crss -- 54 -- Total Gate Charge Qg VDD = 30V, ID = 5A, VGS = 10V -- 25 -- nCGate-Source Charge Qgs -- 4.5 -- Gate-Drain Charge Qgd -- 6.5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 5A, RG = 3Ω -- 5 -- ns Turn-on Rise Time tr -- 2.6 -- Turn-off Delay Time td(off) -- 16 -- Turn-off Fall Time tf -- 2.3 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 10 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 5A, VGS = 0V di/dt=100A/us -- 49 -- nC Reverse Recovery Time Trr -- 29 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1829-V1.1) DFN3*3-8L Dual Package information