G3416 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1860-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 6 A Pulsed Drain Current (note1) IDM 24 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 96 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 20V l ID (at VGS = 10V) 6A l RDS(ON) (at VGS = 4.5V) < 20mΩ l RDS(ON) (at VGS = 2.5V) < 30mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM) : 2KV Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G3416 SOT-23 G3416 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1860-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±20 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 0.7 1.3 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 3A -- 16 20 mΩ VGS = 2.5V, ID = 2A -- 21 30 gFS VGS = 5V, ID = 3A -- 8 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 748 -- pFOutput Capacitance Coss -- 138 -- Reverse Transfer Capacitance Crss -- 123 -- Total Gate Charge Qg VDD = 10V, ID = 3A, VGS = 10V -- 15 -- nCGate-Source Charge Qgs -- 2.5 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 10V, ID = 3A, RG = 2.2Ω -- 5 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 22 -- Turn-off Fall Time tf -- 9.8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 6 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 3A, VGS = 0V di/dt=100A/us -- 1.2 -- nC Reverse Recovery Time Trr -- 15 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1860-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1860-V1.2)