G30N02T GOFORD | Alldatasheet
Document overview
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Technical content
Description @ The G30N02 uses advanced trench technology and ° design to provide excellent Rosion) with low gate charge. It can be used in a wide variety of applications. (1) Go General Features e } Voss | Rosion) | Ib es @4.5v(Typ) Schematic diagram D 20V 10.5mQ 30A __) @ High density cell design for ultra low Rdson G30N02 @ Fully characterized avalanche voltage and current @ Good stability and uniformity with high Eas TU OD @ Excellent package for good heat dissipation cS | o | s @ Special process technology for high ESD capability Marking and pin assignment @ RoHS Compliant Application <b @ Power switching application @ Load switching z @ LED power supply ° b TO-220 TO-252 G 's GD
Ordering Information
G30N02K G30N02 TO-252 2500pcs/Reel G30N02T G30N02 TO-220 50pcs/Tube Absolute Maximum Ratings (Ta=25‘Cunless otherwise noted) [Parameter | Symbot | imit | unit OS Drain Current-Continuous(To=100°C) 1p (100°C) [PusesDrincuret Sh [Moxmim PoverOsspeion ———SSSCSCSCSCS~S~Si Thermal Characteristic www.gofordsemi.com TEL: 0755-29961263 FAX:0755 “20961488.
Electrical Characteristics (Ta=25‘Cunless otherwise noted) [Parameter [Symbol] Condition [win] Typ | wax | Unit] [Ban-souce eskdon veins | Was | wonavasom [@ [~ [| v_] [Zao Gat volgen Ganon | os | Vaanuverov [| | 1 | a] [eee estge Cure | iss | Voseatavoov [| oo | ma] [ose Treen votogs —_[ Vom] Vawvauaima [os [ov | 12 [ v_ [Bahu Onsite Reisarce | Ronan | Vaasv ran [| -_[ 08 | a | wo] [rove taresmaiceres | | vorevtraon [w | -[- | 8] a ae a F=1.0MHz [Te [oe a et ps foes ene, CTS [iunonFat tne ee [ras caechage | Pe re [sat-orin wpe | a ae oe [Bee Fonardvatage™™" [Va vorviemia [| [7 | v_ [Bede FoverdGuren™= 7 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 10 sec. 3. Pulse Test: Pulse Width < 300s, Duty Cycle s 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: Tj=25'C ,Vpp=10V,Vg=10V,L=0.5mH,Rg=250 www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961 wt)
R, 10V Ves tL Qy, r+ Qa Voo Ves smal] e = Charge Switch Time Test Circuit Ry PS 90% i 90% 90% ~7f- V, — 1 1 Ves °° Voo / ! Re fH H Ves t,.} | lt tt t wy et EL fe tog + fe toy + EAS Test Circuit lo] L BVpss Vos = ks >, Voo oN Vos Re Ib \\ wo SL oe a \\ - a ay 4 www.gofordsemi.com TEL: 0755-29961263 FAX-0755 -2006 1466 )
Typical Electrical and Thermal Characteristics (Curves) | pC eT zy 60 2 py) | eH AA 3 iJ
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Skee) | SCR 0 08 a u 2 S : s) = 0 25 50 75 100 125 150 175 200 Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature 100 10 ae [| A = 0 1 % 8 Vos= 10V 7 = 2 1,=20A pol || yi | je dle A : Pi | TAT e.t{ | lt iz LZ a 2 be en if+7f | | LEY ttl je Vi | | tl 0 05 1 15 2 25 3 0 3 6 9 12 15 Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge @ 40 1.0E+02 = 6 “Tew TOT TT) | ese [ Tr TI B.- T PP f eC TZ 8°} 8" oe AV gs | |] | TT Tt Tf 10.02 $f gon} Yt fT 2° rrr) | eee VT TT | fof ty é wi tLA | tft ° . ° 7 ~ 00 02 04 06 O08 10 12 Ip- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward www.gofordsemi.com TEL: 0755-29961263 FAX-0755 -2006 1466 )
1400 40 T LT... 1 ed SE FACET veo a 2,-/,INTLTI TI .° Es . pelt 1 1 8 ee eR 5 a 5 aw Ke — ee = ot] ce EN 0g cc es a BS 0 5 10 15 20 0 2% 80 75 100 125 180 175 Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 7 Capacitance vs Vds Figure 9 Power De-rating tT TS eT fT | NEEL © yo LA Te IN Pins Tn ™ >) S67] Seay k NX Fi ee ee oe eel rt tT | INE] i= R, | a | oO 15 eee Ps N 01 1 10 100 0 25 50 75 100 125 150 175 Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 8 Safe Operation Area Figure 10 Current De-rating
8 In descending order
w = ima ==. | Aw SE ———— BE —— | | 8 = oo Uo S3 ert Tuen=Ta#PouZase Resa = & | Single Pulse Rey=3.8°CW © oor LLL 0.00001 0.0001 0.001 0.01 01 1 10 100 1000 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.gofordsemi.com TEL: 0755-29961263 FAX-0755 -2006 1466 )
' b3 1 ee {1 —H 2 as : “ | | = | ie | _ | f= uk rn = (1) COMMON DIMENSIONS i SyNpoh [wisn Taxi a We | | Pat 020 Poe Pos TOT Poe TO Poo PORE Po A -< PoE a Pe BSG a : OP: a =O a - ) © a www.gofordsemi.com TEL: 0755-29961263 FAX-0755 -2006 1466 )
A CP = C) s D 3 AQ i 4 el : COMMONDIMENSTONS Lm OCOCOCOOCCCC~‘*d onpe fe +| 04 | 050 | 06 | [ei 550d SCC SSC~CSSSC~CSCS 10,00 10.30 ee 12.75 13. 50 13. 80 [SCY STTCOCTTC~SsSSCS.GOC*dSC(‘S;S OO www.gofordsemi.com TEL: 0755-29961263 FAX-0755 -2006 1466 )