G2N65K GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1037-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Continuous Drain Current ID 2 A Pulsed Drain Current (note1) IDM 8 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 35 W Single pulse avalanche energy （note2） EAS 26 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W Maximum Junction-to-Case RthJC 3.57 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device family is suitable for high efficiency switch mode power supplies. General Features l VDS 650V l ID (at VGS = 10V) 2A l RDS(ON) (at VGS = 10V) < 5Ω l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2N65K TO-252 G2N65 2500pcs/Reel Schematic diagram TO-252
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1037-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 650 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.2 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 4.1 5.0 Ω gFS VGS = 5V, ID = A -- 1.6 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 400V, f = 1.0MHz -- 250 -- pFOutput Capacitance Coss -- 5 -- Reverse Transfer Capacitance Crss -- 0.1 -- Total Gate Charge Qg VDD = 400V, ID = 1A, VGS = 10V -- 8 -- nCGate-Source Charge Qgs -- 2 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 400V, ID = 1A, RG = 25Ω -- 7 -- ns Turn-on Rise Time tr -- 9 -- Turn-off Delay Time td(off) -- 20 -- Turn-off Fall Time tf -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 2 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 1A, VGS = 0V di/dt=100A/us -- 0.4 -- μC Reverse Recovery Time Trr -- 126 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=10mH,Rg=25Ω The table shows the minimum avalanche energy, which is 72mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1037-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1037-V1.0) D A A1L (L1) θ H c E b e C O M M O N D I M E N S I O N S SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 θ 0° - 8°