G2K2P10D3E GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1836-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -100 V Continuous Drain Current ID -10 A Pulsed Drain Current (note1) IDM -40 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 31 W Single pulse avalanche energy （note2） EAS 25 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 4 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G2K2P10D3E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -100V l ID (at VGS = -10V) -10A l RDS(ON) (at VGS = -10V) < 210mΩ l RDS(ON) (at VGS = -4.5V) < 230mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7.0KV Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G2K2P10D3E DFN3X3-8L G2K2P10 5000pcs/Reel Schematic diagram DFN3X3-8L pin assignment

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1836-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -100V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -1.6 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -6A -- 175 210 mΩ VGS = -4.5V, ID = -6A -- 188 230 gFS VDS = -15V,ID = -6A -- 12 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -50V, f = 1.0MHz -- 1668 -- pFOutput Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 44 -- Total Gate Charge Qg VDD = -50V, ID = -6A, VGS = -10V -- 33 -- nCGate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 7 -- Turn-on Delay Time td(on) VDD = -50V, ID = -6A, RG = 9Ω -- 52 -- ns Turn-on Rise Time tr -- 12 -- Turn-off Delay Time td(off) -- 38 -- Turn-off Fall Time tf -- 28 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -10 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -6A, VGS = 0V di/dt=-500A/us -- 35 -- nC Reverse Recovery Time Trr -- 46 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1836-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1836-V1.0) DFN3x3-8L Package Information SYMBOL COMMON MM MIN NOM MAX A 0.70 0.75 0.85 A1 - - 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 θ 10。 12。 14。 b L K D E1 E θ c t e D A