G29 GOFORD | Alldatasheet
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www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1441)
Description
The G29 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS -15V ⚫ ID (at VGS = -12V) -4.1A ⚫ RDS(ON) (at VGS = - 4.5V) < 30mΩ ⚫ RDS(ON) (at VGS = - 2.5V) < 40mΩ ⚫ RDS(ON) (at VGS = - 1.8V) < 56mΩ ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G29 SOT-23 G29 3000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -15 V Continuous Drain Current ID -4.1 A Pulsed Drain Current (note1) IDM -20 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.05 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 120 ºC/W Schematic diagram SOT-23 P-Channel Enhancement Mode Power MOSFET Marking and pin assignment G29
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1441) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µ A -15 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -15V, VGS = 0V -- -- -1 uA Gate-Source Leakage IGSS VGS =±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µ A -0.4 -0.55 -0.9 V Drain-Source On-Resistance RDS(on) mΩVGS = -2.5V, ID = -3A -- 32 40 Forward Transconductance gFS VDS=-5V,ID=-2A 5 -- -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -4V, f = 1.0MHz -- 740 -- pFOutput Capacitance Coss -- 290 -- Reverse Transfer Capacitance Crss -- 190 -- Total Gate Charge Qg VDD = -4V, ID = -4.1A, VGS = -4.5V -- 7.8 -- nCGate-Source Charge Qgs -- 1.2 -- Gate-Drain Charge Qgd -- 1.6 -- Turn-on Delay Time td(on) VDD = -4V, ID = -3.3A, RG = 1Ω -- 12 -- ns Turn-on Rise Time tr -- 35 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 10 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4.1 A Body Diode Voltage VSD TJ = 25ºC, ISD = -1.6A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1441) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1441） Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°