G28N02T GOFORD | Alldatasheet
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Technical content
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Description
The G28N02T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS 20V ⚫ ID (at VGS = 10V) 28A ⚫ RDS(ON) (at VGS = 4.5V) < 7.3mΩ ⚫ RDS(ON) (at VGS = 2.5V) < 8.7mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G28N02T TO-220 G28N02 50pcs/Tube Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 28 A Pulsed Drain Current (note1) IDM 110 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Schematic diagram TO-220 N-Channel Enhancement Mode Power MOSFET 29961263
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 0.5 0.65 0.9 V Drain-Source On-Resistance RDS(on) mΩ Forward Transconductance gFS VDS=10V,ID=12A 20 -- -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 2000 -- pFOutput Capacitance Coss -- 420 -- Reverse Transfer Capacitance Crss -- 170 -- Total Gate Charge Qg VDD = 10V, ID = 6A, VGS = 10V -- 42 -- nCGate-Source Charge Qgs -- 10.8 -- Gate-Drain Charge Qgd -- 9.2 -- Turn-on Delay Time td(on) VDD = 10V, ID = 6A, RG = 1Ω -- 25 -- ns Turn-on Rise Time tr -- 15 -- Turn-off Delay Time td(off) -- 25 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 28 A Body Diode Voltage VSD TJ = 25ºC, ISD = 6A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit 29961263
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Symbol Dimensions in Millimeters MIN. NOM. MAX. A 4.37 4.57 4.7 A1 1.25 1.3 1.4 A2 2.2 2.4 2.6 b 0.7 0.8 0.95 b2 1.7 1.27 1.47 c 0.45 0.5 0.6 D 15.1 15.6 16.1 D1 8.8 9.1 9.4 D2 5.5 E 9.7 10 10.3 e 2.54BSC e1 5.08BSC H1 6.25 6.5 6.85 L 12.75 13.5 13.8 L1 3.1 3.4 ∅P 3.4 3.6 3.8 Q 2.6 2.8 3 29961263