G26P04D5 GOFORD | Alldatasheet

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Description

The G26P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS -40 V ⚫ ID (at VGS = -10V) -26A ⚫ RDS(ON) (at VGS = -10V) < 18mΩ ⚫ RDS(ON) (at VGS = -4.5V) < 22mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G26P04D5 DFN5*6-8L G26P04 5000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Continuous Drain Current ID -26 A Pulsed Drain Current (note1) IDM -91 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Thermal Resistance, Junction-to-Case RthJC 2.5 ºC/W Schematic diagram P-Channel Enhancement Mode Power MOSFET DFN5*6-8L 29961263 Marking and pin assignment

www.gofordsemi.com TEL 0755 FAX :0755 29961466 Specifications T J ºC unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain Source Breakdown Voltage V (BR)DSS V GS = 0V, I D 250µ A V Zero Gate Voltage Drain Current I DSS V DS -40V, V GS = 0V uA Gate Source Leakage I GSS V GS 20V 100 nA Gate Source Threshold Voltage V GS( th V DS = V GS , I D 250µ A -1.5 -2.5 V Drain Source On Resistance R DS(on) V GS 10V, I D 12A m Ω V GS 4.5V, I D 12A Forward Transconductance g FS V DS =-5V,I D 12A S Dynamic Parameters Input Capacitance C iss V GS = 0V, V DS 20V, f = 1.0MHz 2479 pF Output Capacitance C oss 274 Reverse Transfer Capacitance C rss 204 Total Gate Charge Q g V DD 40V, I D 12A, V GS 10V nC Gate Source Charge Q gs 6.1 Gate Drain Charge Q gd 10.1 Turn on Delay Time t d(on) V DS 20V, I D 1A, R G = 6 Ω ns Turn on Rise Time t r Turn off Delay Time t d(off) Turn off Fall Time t f Drain Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25 º C A Body Diode Voltage V SD T J = 25º C, I F I s , V GS = 0V 1.2 V Notes Repetitive Rating: Pulse width limited by maximum junction temperature Identical low side and high side switch with identical R G 29961263 G26P04D5

www.gofordsemi.com TEL 0755 FAX :0755 29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit 29961263 G26P04D5

www.gofordsemi.com TEL 0755 FAX :0755 29961466 Typical Characteristics T J = 25 º C, unless otherwise noted 29961263 G26P04D5 Fig.1 Typical Output Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.4 On-Resistance v.s. Gate Voltage Fig.3 Normalized On-Resistance v.s. Junction Temperature Fig.5 Forward Characteristic of Reverse Diode Fig.6 Transfer Characteristics I D =14A V GS =10V I D =7A T A =25 T A =125 T A =25 T A T A =125 T A T A =25 T A =125 V GS =4.5V 10V V GS =4.5V 10V -12

www.gofordsemi.com TEL 0755 FAX :0755 29961466 Typical Characteristics T J = 25 º C, unless otherwise noted 29961263 G26P04D5 Fig.8 Typical Capacitance Characteristics Fig.7 Gate Charge Characteristics Fig 11. Effective Transient Thermal Impedance Fig 9. Maximum Safe Operating Area Fig 10. Single Pulse Maximum Power Dissipation 0.001 0.01 0.1 100 1000 0.1 100 I D (A) V DS , Drain to Source Voltage (V) V GS , Gate to Source Voltage (V) Q G , Total Gate Charge (nC) 100 1000 10000 C (pF) V DS , Drain to Source Voltage (V) 500 1,000 1,500 2,000 2,500 3,000 0.00001 0.0001 0.001 0.01 0.1 PEAK TRANSIENT POWER(W) T1 TIME(SEC) I D 12A V DS 10V Crss Coss Ciss f=1MHz V GS =0V V GS =10V Single Pulse R ΘJC =2.5 T C =25 DC 10us 100ms 1ms Single Pulse R ΘJC =2.5 T C =25 100us 10ms

www.gofordsemi.com TEL 0755 FAX :0755 29961466 G O F O RD DFN5 Information 29961263 G26P04D5