G250N03IE GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1666-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Continuous Drain Current ID 5.3 A Pulsed Drain Current (note1) IDM 22 A Gate-Source Voltage VGS ±10 V Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 89 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G250N03IE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 30V l ID (at VGS = 10V) 5.3A l RDS(ON) (at VGS = 10V) < 25mΩ l RDS(ON) (at VGS = 4.5V) < 30mΩ l RDS(ON) (at VGS = 2.5V) < 50mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)：3.5KV Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G250N03IE SOT-23 G250N03 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1666-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 1 1.3 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 4A -- 21 25 mΩVGS = 4.5V, ID =4A -- 24 30 VGS = 2.5V, ID =2A -- 37 50 gFS VGS = 5V, ID = 4A -- 10 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 573 -- pFOutput Capacitance Coss -- 66 -- Reverse Transfer Capacitance Crss -- 56 -- Total Gate Charge Qg VDD = 15V, ID = 4A, VGS = 4.5V -- 9.1 -- nCGate-Source Charge Qgs -- 2.1 -- Gate-Drain Charge Qgd -- 2.8 -- Turn-on Delay Time td(on) VDD = 15V, ID = 4A, RG = 3Ω -- 3 -- ns Turn-on Rise Time tr -- 2.8 -- Turn-off Delay Time td(off) -- 25 -- Turn-off Fall Time tf -- 4 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 5.3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 4A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 4A, VGS = 0V di/dt=100A/us -- 2 -- nC Reverse Recovery Time Trr -- 6 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1666-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1666-V1.2)