G2312 GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1496-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 5 A Pulsed Drain Current (note1) IDM 20 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.25 W Single pulse avalanche energy （note2） EAS 8 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 100 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G2312 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 20V l ID (at VGS = 10V) 5A l RDS(ON) (at VGS = 4.5V) < 17mΩ l RDS(ON) (at VGS = 2.5V) < 20mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2312 SOT-23 G2312 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1496-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.4 0.7 1.0 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 3A -- 13 17 mΩ VGS = 2.5V, ID = 2A -- 16 20 gFS VGS = 5V, ID = 3A -- 20 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 830 -- pFOutput Capacitance Coss -- 132 -- Reverse Transfer Capacitance Crss -- 119 -- Total Gate Charge Qg VDD = 10V, ID = 3A, VGS = 4.5V -- 10.5 -- nCGate-Source Charge Qgs -- 1.5 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 10V, ID = 3A, RG = 3Ω -- 6.5 -- ns Turn-on Rise Time tr -- 43 -- Turn-off Delay Time td(off) -- 28 -- Turn-off Fall Time tf -- 30 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 5 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 3A, VGS = 0V di/dt=100A/us -- 10 -- nC Reverse Recovery Time Trr -- 18 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=20V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1496-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1496-V1.0)