G2305A GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1827-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Continuous Drain Current ID -4 A Pulsed Drain Current (note1) IDM -16 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 1.4 W Single pulse avalanche energy （note2） EAS 12 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 90 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G2305A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS -20V l ID (at VGS = -10V) -4A l RDS(ON) (at VGS = -4.5V) < 35mΩ l RDS(ON) (at VGS = -2.5V) < 45mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2305A SOT-23 G2305 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1827-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.45 -0.7 -1.0 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -3A -- 12 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 1050 -- pFOutput Capacitance Coss -- 128 -- Reverse Transfer Capacitance Crss -- 116 -- Total Gate Charge Qg VDD = -10V, ID = -3A, VGS = -4.5V -- 12 -- nCGate-Source Charge Qgs -- 1.9 -- Gate-Drain Charge Qgd -- 2.5 -- Turn-on Delay Time td(on) VDD = -10V, ID = -3A, RG = 1Ω -- 11 -- ns Turn-on Rise Time tr -- 33 -- Turn-off Delay Time td(off) -- 28 -- Turn-off Fall Time tf -- 9 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4 A Body Diode Voltage VSD TJ = 25ºC, ISD = -3A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -3A, VGS = 0V di/dt=-100A/us -- 4.5 -- nC Reverse Recovery Time Trr -- 26 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-20V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1827-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1827-V1.0)