G2304A GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0762-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Continuous Drain Current ID 3.6 A Pulsed Drain Current (note1) IDM 14.4 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 104 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G2304A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS 30V l ID (at VGS = 10V) 3.6A l RDS(ON) (at VGS = 10V) < 39mΩ l RDS(ON) (at VGS = 4.5V) < 52mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2304A SOT-23 G2304 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0762-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.5 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1.8A -- 28 39 mΩ VGS = 4.5V, ID = 1.8A -- 40 52 gFS VGS = 5V, ID = 1.8A -- 11 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 294 -- pFOutput Capacitance Coss -- 47 -- Reverse Transfer Capacitance Crss -- 36 -- Total Gate Charge Qg VDD = 15V, ID = 1.8A, VGS = 10V -- 5 -- nCGate-Source Charge Qgs -- 1 -- Gate-Drain Charge Qgd -- 0.8 -- Turn-on Delay Time td(on) VDD = 15V, ID = 1.8A, RG = 6Ω -- 13 -- ns Turn-on Rise Time tr -- 64 -- Turn-off Delay Time td(off) -- 13 -- Turn-off Fall Time tf -- 26 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3.6 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1.8A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 1.8A, VGS = 0V di/dt=100A/us -- 1.5 -- nC Reverse Recovery Time Trr -- 16 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0762-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0762-V1.1)