G20N03D2 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1474)
Description
The G20N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS 30V ⚫ ID (at VGS = 10V) 9A ⚫ RDS(ON) (at VGS = 10V) <15mΩ ⚫ RDS(ON) (at VGS = 4.5V) < 21mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G20N03D2 DFN2X2-6L G20N03 3000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Continuous Drain Current ID 9 A Pulsed Drain Current (note1) IDM 35 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC DFN2x2- R Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient thJA ºC59 /W Schematic diagram N-Channel Enhancement Mode Power MOSFET
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1474) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 1.3 1.5 2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 12.5 m Ω VGS = 4.5V, ID = 5A -- 17.5 21 Forward Transconductance gFS VDS = 5V,ID = 5A -- 9.5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 860 -- pFOutput Capacitance Coss -- 80 -- Reverse Transfer Capacitance Crss -- 76 -- Total Gate Charge Qg VDD = 15V, ID = 4A, VGS = 10V -- 20 -- nCGate-Source Charge Qgs -- 2.5 -- Gate-Drain Charge Qgd -- 5 -- Turn-on Delay Time td(on) VDD = 15V, ID = 4A, RG = 1Ω -- 4 -- ns Turn-on Rise Time tr -- 9 -- Turn-off Delay Time td(off) -- 17 -- Turn-off Fall Time tf -- 6 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 9 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5A, VGS = 0V -- -- 1.2 V Reverse Recovery Chrage Qrr IF=5A, di/dt=100A/us 9 -- nC Reverse Recovery Time Trr 15 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1474) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1474) DFN2×2-6L Package Information