G200N10K GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1919-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 60 A Pulsed Drain Current (note1) IDM 240 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 105 W Single pulse avalanche energy （note2） EAS 121 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.2 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The G200N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 60A l RDS(ON) (at VGS = 10V) < 17mΩ l RDS(ON) (at VGS = 4.5V) < 18mΩ l RDS(ON) (at VGS = 3.3V) < 19mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G200N10K TO-252 G200N10 2500pcs/Reel Schematic diagram TO-252

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1919-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.7 1.2 1.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 13 17 mΩVGS = 4.5V, ID = 20A -- 13.5 18 VGS = 3.3V, ID = 15A -- 14.5 19 gFS VGS = 5V, ID = 20A -- 44 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 6274 -- pFOutput Capacitance Coss -- 187 -- Reverse Transfer Capacitance Crss -- 166 -- Total Gate Charge Qg VDD = 50V, ID = 20A, VGS = 10V -- 146 -- nCGate-Source Charge Qgs -- 29 -- Gate-Drain Charge Qgd -- 57 -- Turn-on Delay Time td(on) VDD = 50V, ID = 20A, RG = 2.5Ω -- 17 -- ns Turn-on Rise Time tr -- 13 -- Turn-off Delay Time td(off) -- 55 -- Turn-off Fall Time tf -- 16 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 60 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 58 -- nC Reverse Recovery Time Trr -- 35 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 324mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1919-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1919-V1.0)