G2009G GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0690-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 200 V Continuous Drain Current ID 9 A Pulsed Drain Current (note1) IDM 36 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 55 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 2.3 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G2009G uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 200V l ID (at VGS = 10V) 9A l RDS(ON) (at VGS = 10V) < 240mΩ l RDS(ON) (at VGS = 4.5V) < 250mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2009G TO-252 G2009G 2500pcs/Reel Schematic diagram TO-252
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0690-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 3 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 200 240 mΩ VGS = 4.5V, ID = 1A -- 205 250 gFS VGS = 5V, ID = 1A -- 3 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 1487 -- pFOutput Capacitance Coss -- 23 -- Reverse Transfer Capacitance Crss -- 19 -- Total Gate Charge Qg VDD = 100V, ID = 2A, VGS = 10V -- 16 -- nCGate-Source Charge Qgs -- 3.4 -- Gate-Drain Charge Qgd -- 5.1 -- Turn-on Delay Time td(on) VDD = 100V, ID = 2A, RG = 5Ω -- 11 -- ns Turn-on Rise Time tr -- 6.4 -- Turn-off Delay Time td(off) -- 20 -- Turn-off Fall Time tf -- 12 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 9 A Body Diode Voltage VSD TJ = 25ºC, ISD = 2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 2A, VGS = 0V di/dt=100A/us -- 48 -- nC Reverse Recovery Time Trr -- 46 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0690-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0690-V1.1) D A A1L (L1) θ H c E b e C O M M O N D I M E N S I O N S SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 θ 0° - 8°