G2003A GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

The G2003A uses advanced trench technology and design to provide excellent Rosion) with low gate charge. It G can be used in a wide variety of applications. General Features Schematic Diagram @ Vos = 190V,Ip =3A ye Rosion) < 540MQ @ Ves=10V_ (Typ:430mQ) 4 Rosion) < 560M @ Ves=10V_ (Typ:440mQ) [ @ High density cell design for ultra low Rdson A = = s @ Fully characterized avalanche voltage and current @ Excellent package for good heat dissipation Marking and Pin Assignment @ RoHS Compliant Application %. @ Power switching application SOT-23-3L

Ordering Information

Absolute Maximum Ratings (T,=25‘Cunless otherwise noted) [Parameter | Symbot[imit | unit [DrainSoueevotge —SSCSCSC~dCSSCSs SP tod [Dean Conentconinoous———SSSCSCSCSC~C~S~“‘i [Dean Conen-Puses™T——SSSSSSCS*d a Thermal Characteristic Electrical Characteristics (Ta=25‘C unless otherwise noted) [Parameter | Symbot_ [Condition | min | Typ | Max | unit | Drain-Source Breakdown Voltage Ves=0V Ip=250pA. [io] - | - [| v | [ze Gate Voge Dan Conent [tes | Vaet00vvoxev | - | [4 | 8 www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466

On Characteristics “°°? Drain-Source On-State Resistance | Rosin _| Ves=4.5V, lb=2A [ - | 440 | sco | mo | Dynamic Characteristics [out capacance | an put Cap: “ F=1.0MHz Switching Characteristics “°* ” ‘Ds= ID=2ZA, rg Veeztov P= fest. | Drain-Source Diode Characteristics Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 10 sec. 3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. 4. Guaranteed by design, not subject to production www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466

1) Ens test circuit BVpss L Re + Voo 2) Gate charge test circuit = L Vcc DUT + 3) Switch Time Test Circuit Rt Vos Re Vop} 7 D.U.T

1 Ves

www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466

Typical Electrical and Thermal Characteristics (Curves) 8 25 [Fake | eT Ves = 10 thru 4V g ID = J z 6 /| ai a = Bis A © / aw '° 7 PU git | et |

2 A bane

b 2 Bosh | yo} | i* | )2 7 Tite z O_o 00 0 > A a 3 50 -25 oO 25 50 75 100 125 150 Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature 8 10 I e fe TTA = | o ®

8 Ss 4

< 24 — i To = 125°C a ; i A b ? y 6 2 o Z. > 0 0 1 2 3 4 5 6 o cs s i Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge x -_ |} + fF fF Ves = 10V = es nS A! Ae | J os ge [of tT fT & = e g 7 i rs es as as F P| | | : SSeS T oO es se Ss es Ss ce | 6 o2 3 -—-—+ oe ° xe [| lf | 5 we 3 oi _| VF if | | 00 00 o2 04 06 08 1.0 Oo 2 4 6 8 Ip- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466

*e° (rons) HY “eetoum L-E--H4 \\e i 2 | | lo=250A rt ft | i __ 600 — Pi ty | PT yy pt Toe EERE 8 400 a 4 | & go vf tt tert t tt | i] | Eee © 200 [S) oS 0.9 | o —— os_L_L ITT I I I oO 20 40 60 80 -50 ie) 50 100 Ta(*C) Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 7 Capacitance vs Vds Figure 9 BVpss vs Junction Temperature imited Hog ENTIRE 1.0 | Vos=Ves SE TAN wie es | EE EE ETN ne post PT Pre ry rr ooo LH TS essieee ES TT ey o4 1 10 100 1000 50 0 so 100 TsCC) Vds Drain-Source Voltage (V) T,-Junction Temperature(‘C) Figure 8 Safe Operation Area Figure 10 Vestn) vs Junction Temperature

8 TUM TAM TAI TT TUE TIT

eR eae ig = Soe a ee eee SBE Owoede-08 SE £2 Sete eo mer ti ie fo EAH Ea ir

3 E ST ee aE ale Notes:

E Va [oo 2 et tke Zo PS or te tt Ed, ee bee Ce 1. Duty Cycle, O= = * 6 peer eT TT PTT TT TTT 2 Per unt pase = Reus =41.7 00% Too Lemons PT TUTTI LA TTIINT FTI TTT] Seri 0.0 a nod 10-3 10-2 10-1 1 10 100 600 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466

SOT-23-3L package information A a a E = SS || L 'D| J G H Cc ee a0 a0 ato 8 | ts | tw | to cf tm | tt to ee ee a www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466