G2002A GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0601) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 200 V Continuous Drain Current ID 2 A Pulsed Drain Current (note1) IDM 8 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 200V l ID (at VGS = 10V) 2A l RDS(ON) (at VGS = 10V) < 540mΩ l RDS(ON) (at VGS = 4.5V) < 560mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G2002A SOT-23-6L 2002A 3000pcs/Reel Schematic diagram SOT-23-6L
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0601) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 -- -- V Zero Gate Voltage Drain Current IDSS VDS =160V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 3 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 1A -- 410 540 mΩ VGS = 4.5V, ID = 1A -- 415 560 gFS VGS = 5V, ID = 1A -- 5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 100V, f = 1.0MHz -- 733 -- pFOutput Capacitance Coss -- 16 -- Reverse Transfer Capacitance Crss -- 11 -- Total Gate Charge Qg VDD = 100V, ID = 2A, VGS = 10V -- 16 -- nCGate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) VDD = 100V, ID = 2A, RG = 4.5Ω -- 20 -- ns Turn-on Rise Time tr -- 6 -- Turn-off Delay Time td(off) -- 28 -- Turn-off Fall Time tf -- 20 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 2 A Body Diode Voltage VSD TJ = 25ºC, ISD = 2A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 2A, VGS = 0V di/dt=100A/us -- 48 -- nC Reverse Recovery Time Trr -- 46 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0601) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A0601)