G1NP02LLE GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage VDS 20 -20 V Continuous Drain Current ID 1.3 1.1 A Pulsed Drain Current (note1) IDM 5.2 4.4 A Gate-Source Voltage VGS ±10 ±10 V Power Dissipation PD 1.25 1.25 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Symbol NMOS PMOS Unit Thermal Resistance, Junction-to-Ambient RthJA 100 100 ºC/W N and P Channel Enhancement Mode Power MOSFET
Description
The G1NP02LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l NMOS l VDS 20V l ID (at VGS = 10V) 1.3A l RDS(ON) (at VGS = 4.5V) < 210mΩ l RDS(ON) (at VGS = 2.5V) < 270mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM) : 2.0KV l PMOS l VDS -20V l ID (at VGS = -10V) -1.1A l RDS(ON) (at VGS = -4.5V) < 460mΩ l RDS(ON) (at VGS = -2.5V) < 580mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM) : 2.0KV Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G1NP02LLE SOT-23-6L Dual G1NP02E 3000pcs/Reel Schematic diagram SOT-23-6L Dual
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.35 0.55 1 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 0.65A -- 170 210 mΩ VGS = 2.5V, ID = 0.55A -- 220 270 gFS VGS = 5V, ID = 0.55A -- 1.3 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 146 -- pFOutput Capacitance Coss -- 108 -- Reverse Transfer Capacitance Crss -- 52 -- Total Gate Charge Qg VDD = 10V, ID = 0.65A, VGS = 4.5V -- 1 -- nCGate-Source Charge Qgs -- 0.27 -- Gate-Drain Charge Qgd -- 0.21 -- Turn-on Delay Time td(on) VDD = 10V, ID = 0.65A, RG = 10Ω -- 17.5 -- ns Turn-on Rise Time tr -- 2.1 -- Turn-off Delay Time td(off) -- 9.5 -- Turn-off Fall Time tf -- 22 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 1.3 A Body Diode Voltage VSD TJ = 25ºC, ISD =0.65A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 0.65A, VGS = 0V di/dt=20A/us -- 0.39 -- nC Reverse Recovery Time Trr -- 14 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±10 uA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.35 -0.55 -0.8 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -0.5A -- 1.3 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 177 -- pFOutput Capacitance Coss -- 109 -- Reverse Transfer Capacitance Crss -- 51 -- Total Gate Charge Qg VDD = -10V, ID = -0.5A, VGS = -4.5V -- 1.22 -- nCGate-Source Charge Qgs -- 0.36 -- Gate-Drain Charge Qgd -- 0.26 -- Turn-on Delay Time td(on) VDD = -10V, ID = -0.5A, RG = 3Ω -- 18 -- ns Turn-on Rise Time tr -- 4.5 -- Turn-off Delay Time td(off) -- 23 -- Turn-off Fall Time tf -- 15 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -1.1 A Body Diode Voltage VSD TJ = 25ºC, ISD = -0.5A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -0.5A, VGS = 0V di/dt=-20A/us -- 0.95 -- nC Reverse Recovery Time Trr -- 24 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1186.08-V1.2) SOT-23-6L Dual Package Information