G1K6P15K GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1854-V1.1） Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -150 V Continuous Drain Current ID -24 A Pulsed Drain Current (note1) IDM -96 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 90 W Single pulse avalanche energy （note2） EAS 42 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.38 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G1K6P15K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -150V l ID (at VGS = -10V) -24A l RDS(ON) (at VGS = -10V) < 160mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G1K6P15K TO-252 G1K6P15 2500pcs/Reel TO-252 Schematic diagram

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1854-V1.1） Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -150 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -150V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.5 -2.5 -3.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -5A -- 132 160 mΩ gFS VDS = -5V,ID = -5A -- 8 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -75V, f = 1.0MHz -- 1986 -- pFOutput Capacitance Coss -- 84 -- Reverse Transfer Capacitance Crss -- 57 -- Total Gate Charge Qg VDD = -75V, ID = -5A, VGS = -10V -- 22 -- nCGate-Source Charge Qgs -- 6.5 -- Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) VDD = -75V, ID = -5A, RG = 6Ω -- 20 -- ns Turn-on Rise Time tr -- 5 -- Turn-off Delay Time td(off) -- 34 -- Turn-off Fall Time tf -- 12 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -24 A Body Diode Voltage VSD TJ = 25ºC, ISD = -5A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -5A, VGS = 0V di/dt=-100A/us -- 314 -- nC Reverse Recovery Time Trr -- 130 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1854-V1.1） Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1854-V1.1） Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.2 2.3 2.4 A1 0 0.2 A2 0.97 1.07 1.17 b 0.68 0.78 0.9 b3 5.2 5.33 5.5 c 0.43 0.53 0.63 D 5.98 6.1 6.22 D1 5.30REF E 6.4 6.6 6.8 E1 4.63 e 2.286BSC H 9.4 10.1 10.5 L 1.38 1.5 1.75 L1 2.90REF L2 0.51BSC L3 0.88 1.28 L4 0.5 1 L5 1.65 1.8 1.95 θ 0° 8°