G1K1P06HH GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.4） Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -60 V Continuous Drain Current ID -4.5 A Pulsed Drain Current (note1) IDM -18 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40.3 ºC/W Maximum Junction-to-Lead RthJL 18 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G1K1P06HH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -60V l ID (at VGS = -10V) -4.5A l RDS(ON) (at VGS = -10V) < 110mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G1K1P06HH SOT-223 2500pcs/ReeG1K1P06H l Schematic diagram SOT-223

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.4） Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2 -2.7 -4 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -4A -- 90 110 mΩ gFS VDS = -5V,ID = -4A -- 7 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 981 -- pFOutput Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 40 -- Total Gate Charge Qg VDD = -30V, ID = -4A, VGS = -10V -- 11 -- nCGate-Source Charge Qgs -- 2.4 -- Gate-Drain Charge Qgd -- 2.7 -- Turn-on Delay Time td(on) VDD = -30V, ID = -4A, RG = 6Ω -- 12 -- ns Turn-on Rise Time tr -- 10 -- Turn-off Delay Time td(off) -- 19 -- Turn-off Fall Time tf -- 6 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -4.5 A Body Diode Voltage VSD TJ = 25ºC, ISD = -4A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -4A, VGS = 0V di/dt=-100A/us -- 40 -- nC Reverse Recovery Time Trr -- 25 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.4） Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1729-V1.4）