G180C06Y GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol NMOS PMOS Unit Drain-Source Voltage VDS 60 -60 V Continuous Drain Current ID 50 -60 A Pulsed Drain Current (note1) IDM 200 -240 A Gate-Source Voltage VGS ±20 ±20 V Power Dissipation PD 69 115 W Single pulse avalanche energy （note2） EAS 42 81 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 -55 To 150 ºC Thermal Resistance Parameter Symbol NMOS PMOS Unit Thermal Resistance, Junction-to-Ambient RthJA 60 60 ºC/W Maximum Junction-to-Case RthJC 1.8 1.09 ºC/W N and P Channel Enhancement Mode Power MOSFET
Description
The G180C06Y uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l NMOS l VDS 60V l ID (at VGS = 10V) 50A l RDS(ON) (at VGS = 10V) < 17mΩ l RDS(ON) (at VGS = 4.5V) < 20mΩ l 100% Avalanche Tested l RoHS Compliant l PMOS l VDS -60V l ID (at VGS = -10V) -60A l RDS(ON) (at VGS = -10V) < 23mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G180C06Y G180C0TO-252-4 DUAL 6 2500pcs/Reel Schematic diagram pin assignment TO-252-4
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1) NMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.5 2.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 14 17 mΩ VGS = 4.5V, ID = 20A -- 16 20 gFS VGS = 5V, ID = 20A -- 30 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 2429 -- pFOutput Capacitance Coss -- 107 -- Reverse Transfer Capacitance Crss -- 106 -- Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 4.5V -- 39 -- nCGate-Source Charge Qgs -- 7 -- Gate-Drain Charge Qgd -- 8.5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 20A, RG = 3Ω -- 7 -- ns Turn-on Rise Time tr -- 5 -- Turn-off Delay Time td(off) -- 28 -- Turn-off Fall Time tf -- 5.5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 50 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 40 -- nC Reverse Recovery Time Trr -- 28 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1) PMOS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2.0 -3.0 -4.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -10A -- 19 23 mΩ gFS VDS = -5V,ID = -10A -- 13 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -30V, f = 1.0MHz -- 4471 -- pFOutput Capacitance Coss -- 236 -- Reverse Transfer Capacitance Crss -- 234 -- Total Gate Charge Qg VDD = -30V, ID = -10A, VGS = -4.5V -- 62 -- nCGate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 16 -- Turn-on Delay Time td(on) VDD = -30V, ID = -10A, RG = 3Ω -- 20 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 55 -- Turn-off Fall Time tf -- 35 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -60 A Body Diode Voltage VSD TJ = 25ºC, ISD = -10A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -10A, VGS = 0V di/dt=-100A/us -- 71 -- nC Reverse Recovery Time Trr -- 49 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1833-V1.1)