G170P03D3A GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1594-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -30 A Pulsed Drain Current (note1) IDM -120 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 35 W Single pulse avalanche energy （note2） EAS 42 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 3.6 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G170P03D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS -30V l ID (at VGS = -10V) -30A l RDS(ON) (at VGS = -10V) < 15mΩ l RDS(ON) (at VGS = -4.5V) < 21mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G170P03D3A DFN3*3-8L G170P03 5000pcs/Reel Schematic diagram DFN3*3-8L pin assignment

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1594-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.4 -2.5 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -5A -- 12 15 mΩ gFS VDS = -5V,ID = -5A -- 12 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 1805 -- pFOutput Capacitance Coss -- 236 -- Reverse Transfer Capacitance Crss -- 207 -- Total Gate Charge Qg VDD = -15V, ID = -5A, VGS = -10V -- 35 -- nCGate-Source Charge Qgs -- 5.7 -- Gate-Drain Charge Qgd -- 8.8 -- Turn-on Delay Time td(on) VDD = -15V, ID = -5A, RG = 3Ω -- 11 -- ns Turn-on Rise Time tr -- 7.5 -- Turn-off Delay Time td(off) -- 43.5 -- Turn-off Fall Time tf -- 17.5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -30 A Body Diode Voltage VSD TJ = 25ºC, ISD = -5A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -5A, VGS = 0V di/dt=-500A/us -- 20 -- nC Reverse Recovery Time Trr -- 13.3 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1594-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1594-V1.1) SYMBOL COMMON MM MIN NOM MAX A 0.70 0.75 0.85 A1 - - 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 θ 10。 12。 14。 b L K D E1 E θ c t e D A DFN3x3-8L Package Information