G170P02D2 GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1698-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Continuous Drain Current ID -16 A Pulsed Drain Current (note1) IDM -64 A Gate-Source Voltage VGS ±8 V Power Dissipation PD 18 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 6.9 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The G170P02D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -20V l ID (at VGS = -10V) -16A l RDS(ON) (at VGS = -4.5V) < 17mΩ l RDS(ON) (at VGS = -2.5V) < 22mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging G170P02D2 DFN2x2-6L G170P02 3000pcs/Reel Schematic diagram DFN2x2-6L

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1698-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±8V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -0.5 -0.7 -1 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -6A -- 21 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1.0MHz -- 2179 -- pFOutput Capacitance Coss -- 278 -- Reverse Transfer Capacitance Crss -- 276 -- Total Gate Charge Qg VDD = -10V, ID = -6A, VGS = -10V -- 30 -- nCGate-Source Charge Qgs -- 5.3 -- Gate-Drain Charge Qgd -- 7.6 -- Turn-on Delay Time td(on) VDD = -10V, ID = -6A, RG = 2.5Ω -- 20 -- ns Turn-on Rise Time tr -- 14 -- Turn-off Delay Time td(off) -- 95 -- Turn-off Fall Time tf -- 65 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -16 A Body Diode Voltage VSD TJ = 25ºC, ISD = -6A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -6A, VGS = 0V di/dt=-100A/us -- 34 -- nC Reverse Recovery Time Trr -- 67 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1698-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1698-V1.1)