G16N03S GOFORD | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 6
Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1373-V1.1) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Continuous Drain Current ID 16 A Pulsed Drain Current (note1) IDM 64 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 3.8 W Single pulse avalanche energy （note2） EAS 49 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 33 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 30V l ID (at VGS = 10V) 16A l RDS(ON) (at VGS = 10V) < 10mΩ l RDS(ON) (at VGS = 4.5V) < 15mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G16N03S SOP-8 G16N03 4000pcs/Reel Schematic diagram SOP-8 pin assignment
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1373-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 10A -- 7 10 mΩ VGS = 4.5V, ID = 10A -- 9 15 gFS VGS = 5V, ID = 10A -- 25 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1.0MHz -- 1321 -- pFOutput Capacitance Coss -- 234 -- Reverse Transfer Capacitance Crss -- 188 -- Total Gate Charge Qg VDD = 15V, ID = 10A, VGS = 10V -- 17 -- nCGate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 15V, ID = 10A, RG = 1.8Ω -- 10 -- ns Turn-on Rise Time tr -- 8 -- Turn-off Delay Time td(off) -- 13 -- Turn-off Fall Time tf -- 5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 16 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 10A, VGS = 0V di/dt=100A/us -- 18 -- nC Reverse Recovery Time Trr -- 27 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=30V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1373-V1.1) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1373-V1.1)