G15P04K GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1430)
Description
The G15P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS -40V ⚫ ID (at VGS = -10V) -15A ⚫ RDS(ON) (at VGS = -10V) < 39mΩ ⚫ RDS(ON) (at VGS = -4.5V) < 70mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G15P04K TO-252 G15P04 2500pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -40 V Continuous Drain Current ID -15 A Pulsed Drain Current (note1) IDM -60 A Gate-Source Voltage VGS ±20 V Single Pulse Avalanche Energy (note3) EAS 36 mJ Power Dissipation PD 50 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 3 ºC/W Schematic diagram TO-252 P-Channel Enhancement Mode Power MOSFET
www.gofordsemi.com TEL 0755 2996126 FAX :0755 29961466 (A1430) Specifications T J ºC unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain Source Breakdown Voltage V (BR)DSS V GS = 0V, I D 250µ A V Zero Gate Voltage Drain Current I DSS V DS 40V, V GS = 0V uA Gate Source Leakage I GSS V GS 20V 100 nA Gate Source Threshold Voltage V GS( th V DS = V GS , I D 250µ A 1.0 1.5 3.0 V Drain Source On Resistance R DS(on) V GS 10V, I D 10A m Ω V GS 4.5V, I D Forward Transconductance g FS V DS =10V, I D 10A S Dynamic Parameters Input Capacitance C iss V GS = 0V, V DS 20V, f = 1.0MHz 930 pF Output Capacitance C oss Reverse Transfer Capacitance C rss Total Gate Charge Q g V DD 20V, I D 6A, V GS 10V nC Gate Source Charge Q gs Gate Drain Charge Q gd Turn on Delay Time t d(on) V DD 20V, I D 6A, R G = 3 Ω ns Turn on Rise Time t r Turn off Delay Time t d(off) Turn off Fall Time t f Drain Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25 º C A Body Diode Voltage V SD T J = 25 º C, I SD 10A, V GS = 0V 1.2 V Reverse Recovery Time T rr I S 15A, V GS = 0V di/dt= 100A/us ns Reverse Recovery Charge Qrr nc Notes Repetitive Rating: Pulse width limited by maximum junction temperature Identical low side and high side switch with identical R G V DD 40V, R G = 25Ω, L=0.5 mH , Starting T J = 25 C
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1430) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 (A1430) Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.2 2.3 2.4 A1 0 0.2 A2 0.97 1.07 1.17 b 0.68 0.78 0.9 b3 5.2 5.33 5.5 c 0.43 0.53 0.63 D 5.98 6.1 6.22 D1 5.30REF E 6.4 6.6 6.8 E1 4.63 e 2.286BSC H 9.4 10.1 10.5 L 1.38 1.5 1.75 L1 2.90REF L2 0.51BSC L3 0.88 1.28 L4 0.5 1 L5 1.65 1.8 1.95 θ 0° 8°